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onsemi FDH400TR Rectifier Diodes

200V 200mA DO-35 General Purpose Rectifier Diode

900,000 ActiveonsemiDO-35$0.07
FDH400TR - No Image Available

Same model may have multiple batches, images only for reference.

FDH400TR
Manufacturer
Part Number (MPN)
FDH400TR
Detailed Description
200V 200mA DO-35 General Purpose Rectifier Diode
Package
DO-35
Lifecycle Status
Active
Datasheet
PDF FDH400TR Datasheet
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Technical Specifications

onsemi FDH400TR Rectifier Diodes technical specifications.

General

Package / Case
DO-204AH, DO-35, Axial
Mounting Type
Through Hole
Lifecycle Status
Active
Reverse Recovery Time Trr
50 ns
Current Reverse Leakage Vr
100 nA @ 150 V
Capacitance Vr F
2pF @ 0V, 1MHz
Technology
Standard
Voltage Dc Reverse Vr Max
150 V
Current Average Rectified IO
200mA
Operating Temperature Junction
175°C (Max)

Alternate Parts Comparison (FDH400TR vs FDH45N50F-F133 vs FDH300ATR vs FDH333TR)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseDO-204AH, DO-35, AxialTO-247-3DO-204AH, DO-35, AxialDO-204AH, DO-35, Axial
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Lifecycle StatusActiveActiveActiveActive
DescriptionDIODE STANDARD 150V 200MA DO35MOSFET N-CH 500V 45A TO247-3DIODE STANDARD 125V 200MA DO35DIODE STANDARD 125V 200MA DO35
Detailed DescriptionDiode 150 V 200mA Through Hole DO-35N-Channel 500 V 45A (Tc) 625W (Tc) Through Hole TO-247-3Diode 125 V 200mA Through Hole DO-35Diode 125 V 200mA Through Hole DO-35
TechnologyStandardMOSFET (Metal Oxide)StandardStandard
Capacitance Vr F2pF @ 0V, 1MHz--6pF @ 0V, 1MHz6pF @ 0V, 1MHz
Current Average Rectified IO200mA--200mA200mA
Current Reverse Leakage Vr100 nA @ 150 V--1 nA @ 125 V3 nA @ 125 V
Operating Temperature Junction175°C (Max)--175°C (Max)175°C (Max)
SpeedSmall Signal =< 200mA (Io), Any Speed--Small Signal =< 200mA (Io), Any SpeedSmall Signal =< 200mA (Io), Any Speed
Voltage Dc Reverse Vr Max150 V--125 V125 V
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