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onsemi EGP30F Rectifier Diodes

DIODE GEN PURP 300V 3A DO201AD

112,500 ActiveonsemiDO-201AD, Axial$0.54
EGP30F DO-201AD, Axial package illustration

Same model may have multiple batches, images only for reference.

EGP30F
Manufacturer
Part Number (MPN)
EGP30F
Detailed Description
DIODE GEN PURP 300V 3A DO201AD
Package
DO-201AD, Axial
Lifecycle Status
Active
Datasheet
PDF EGP30F Datasheet
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Technical Specifications

onsemi EGP30F Rectifier Diodes technical specifications.

General

Package / Case
DO-201AD, Axial
Mounting Type
Through Hole
Lifecycle Status
Active
Reverse Recovery Time Trr
50 ns
Current Reverse Leakage Vr
5 µA @ 300 V
Capacitance Vr F
75pF @ 4V, 1MHz
Technology
Standard
Voltage Dc Reverse Vr Max
300 V
Current Average Rectified IO
3A
Operating Temperature Junction
-65°C ~ 150°C

Related Parts Comparison (EGP30F vs EGP10D vs EGP20G vs EGP20K)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / CaseDO-201AD, AxialDO-204AL, DO-41, AxialDO-204AC, DO-15, AxialDO-204AC, DO-15, Axial
Mounting TypeThrough HoleThrough HoleThrough HoleThrough Hole
Lifecycle StatusActiveActiveActiveActive
Current Average Rectified IO3A1A2A2A
Current Reverse Leakage Vr5 µA @ 300 V5 µA @ 200 V5 µA @ 400 V5 µA @ 800 V
Operating Temperature Junction-65°C ~ 150°C-65°C ~ 150°C-65°C ~ 150°C-65°C ~ 150°C
Reverse Recovery Time Trr50 ns50 ns50 ns75 ns
SpeedFast Recovery =< 500ns, > 200mA (Io)Fast Recovery =< 500ns, > 200mA (Io)Fast Recovery =< 500ns, > 200mA (Io)Fast Recovery =< 500ns, > 200mA (Io)
TechnologyStandardStandardStandardStandard
Voltage Dc Reverse Vr Max300 V200 V400 V800 V
Voltage Forward Vf Max If1.25 V @ 3 A950 mV @ 1 A1.25 V @ 2 A1.7 V @ 2 A
Capacitance Vr F75pF @ 4V, 1MHz--45pF @ 4V, 1MHz45pF @ 4V, 1MHz
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