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NXP Semiconductors TMBYV10-40FILM Rectifier Diodes

Schottky barrier diodes

3 ActiveNXP SemiconductorsTMBYV10MELF$0.19
TMBYV10-40FILM MELF package illustration

Same model may have multiple batches, images only for reference.

TMBYV10-40FILM
Manufacturer
Part Number (MPN)
TMBYV10-40FILM
Base Model
Detailed Description
Schottky barrier diodes
Package
MELF
Lifecycle Status
Active
Datasheet
PDF TMBYV10-40FILM Datasheet
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Ordering Code Family

TMBYV10 groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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Technical Specifications

NXP Semiconductors TMBYV10-40FILM Rectifier Diodes technical specifications.

General

RoHS
Yes
Number of Pins
2
Package / Case
MELF
Mounting Type
Surface Mount
Operating Temperature
-65 °C ~ 125 °C
Lifecycle Status
Active
Average Rectified Current
1 A
Capacitance
220 pF
Current Average Rectified IO
1 A
Current Reverse Leakage Vr
500 µA @ 40 V

Related Parts Comparison (TMBYV10-40FILM vs TMBYV10-60FILM vs TMBYV10-40FILM)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated Part
Package / CaseMELFDO-213AB, MELFDO-213AB, MELF
Mounting TypeSurface MountSurface MountSurface Mount
Lifecycle StatusActiveObsoleteObsolete
Current Average Rectified IO1 A1A1A
Current Reverse Leakage Vr500 µA @ 40 V500 µA @ 60 V500 µA @ 40 V
Operating Temperature Junction-65°C ~ 125°C-65°C ~ 125°C-65°C ~ 125°C
SpeedFast Recovery =< 500ns, > 200mA (Io)Fast Recovery =< 500ns, > 200mA (Io)Fast Recovery =< 500ns, > 200mA (Io)
Voltage Dc Reverse Vr Max40 V60 V40 V
Voltage Forward Vf Max If550 mV @ 1 A700 mV @ 1 A550 mV @ 1 A
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