NXP Semiconductors PMEG3010ET,215 Rectifier Diodes
1 A very low VF MEGA Schottky barrier rectifiers
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PMEG3010ET,215
Detailed Description
1 A very low VF MEGA Schottky barrier rectifiers
Package
SOT23-3
Lifecycle Status
Active
Datasheet
PMEG3010ET,215 Datasheet
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Technical Specifications
NXP Semiconductors PMEG3010ET,215 Rectifier Diodes technical specifications.
General
RoHS
Yes
Type Number
PMEG3010ET
Size Mm
2.9 x 1.3 x 1
Vr Max V
30
If Max a
1
Nr of Functions
single
Configuration
single
Ir Max a
150
Cd Max Pf
70
Packing
SOT23_215
Alternate Parts Comparison (PMEG3010ET,215 vs PMEG4002EJ,115 vs PMEG2010EH,115 vs PMEG3010BEP,115)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| RoHS | Yes | Yes | Yes | Yes |
| Configuration | single | Single | Single | Single |
| Package | SOT23-3 | SOD-323F | SOD-123F-2 | SOD-128-2 |
| Mounting Type | -- | SMD/SMT | SMD/SMT | SMD/SMT |
| Operating Temperature | -- | - 55°C ~ + 150°C | - 65°C ~ + 150°C | - 55°C ~ + 150°C |
| If Forward Current | -- | 200 mA | 1 A | 1 A |
| Ifsm Forward Surge Current | -- | 2.75 A | 9 A | 50 A |
| Ir Reverse Current | -- | 10 uA | 200 uA | 50 uA |
| Part Aliases | -- | 934063239115 | 934059029115 | 934061471115 |
| Pd Power Dissipation | -- | 385 mW | 375 mW | 625 mW |
| Technology | -- | Si | Si | Si |
| Termination Style | -- | SMD/SMT | SMD/SMT | SMD/SMT |
| Action |
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