NXP Semiconductors PESD3V3L1UB TVS Diodes
Low capacitance unidirectional ESD protection diodes
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PESD3V3L1UB
Category
Base Model
Detailed Description
Low capacitance unidirectional ESD protection diodes
Lifecycle Status
Active
Datasheet
PESD3V3L1UB Datasheet
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Technical Specifications
NXP Semiconductors PESD3V3L1UB TVS Diodes technical specifications.
General
RoHS
Compliant
Number of Pins
2
Number of Channels
1
Operating Temperature
-55 °C ~ 150 °C
Breakdown Voltage
5.6 V
Capacitance
40 pF
Clamping Voltage
11 V
Depth
850 µm
Direction
Unidirectional
Element Configuration
Single
Alternate Parts Comparison (PESD3V3L1UB vs PESD3V3L1UA vs PESD1LIN,115 vs PESD1CAN)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Number of Pins | 2 | -- | 2 | 3 |
| Number of Channels | 1 | -- | 1 | 2 |
| RoHS | Compliant | -- | Compliant | Compliant |
| Breakdown Voltage | 5.6 V | -- | 25.4 V | 25.4 V |
| Direction | Unidirectional | -- | Bidirectional | Bidirectional |
| Max Junction Temperature Tj | 150 °C | -- | 150 °C | 150 °C |
| Peak Pulse Current | 4.5 A | -- | 3 A | 3 A |
| Action |
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