NXP Semiconductors BYC8DX-600,127 Rectifier Diodes
DIODE GEN PURP 600V 8A TO220F
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BYC8DX-600,127
Base Model
Detailed Description
DIODE GEN PURP 600V 8A TO220F
Package
TO-220FP
Lifecycle Status
Active
Datasheet
BYC8DX-600,127 Datasheet
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Technical Specifications
NXP Semiconductors BYC8DX-600,127 Rectifier Diodes technical specifications.
General
Package / Case
Bulk
Mounting Type
Through Hole
Lifecycle Status
Active
Current Average Rectified IO
8 A
Current Reverse Leakage Vr
40 µA @ 600 V
Diode Type
Standard
Operating Temperature Junction
150°C (Max)
Reference Date Code
1232+
Reverse Recovery Time Trr
20 ns
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Related Parts Comparison (BYC8DX-600,127 vs BYC8-600P,127 vs BYC10-600,127 vs MMBD330T1G)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Lifecycle Status | Active | Active | Active | Active |
| Package / Case | Bulk | TO-220-2 | Rail | -- |
| Mounting Type | Through Hole | Through Hole | Through Hole | -- |
| Current Average Rectified IO | 8 A | 8 A | 10 A | -- |
| Current Reverse Leakage Vr | 40 µA @ 600 V | 20 µA @ 600 V | 200 µA @ 600 V | -- |
| Diode Type | Standard | Standard | Standard | -- |
| Operating Temperature Junction | 150°C (Max) | 175°C (Max) | 150°C (Max) | -- |
| Reverse Recovery Time Trr | 20 ns | 18 ns | 55 ns | -- |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | Fast Recovery =< 500ns, > 200mA (Io) | -- |
| Voltage Dc Reverse Vr Max | 600 V | 600 V | 500 V | -- |
| Voltage Forward Vf Max If | 2.9 V @ 8 A | 1.9 V @ 8 A | 2.9 V @ 10 A | -- |
| Configuration | -- | Single | Single | Single |
| Action |
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