Nexperia SI2304DS/DG,215 MOSFETs
N-channel enhancement mode power MOSFET in a 3-pin SOT-23 (TO-236AB) surface-mount package.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI2304DS/DG,215
Detailed Description
N-channel enhancement mode power MOSFET in a 3-pin SOT-23 (TO-236AB) surface-mount package. Features a maximum drain-source voltage of 30V, continuous drain current of 1.7A, and a typical gate threshold voltage of 2V. Offers low drain-source on-resistance of 117mOhm at 10V, with typical gate charge of 4.6nC and input capacitance of 147pF at 10V. Maximum power dissipation is 830mW, operating temperature range from -65°C to 150°C.
Package
SOT-23
Key Features
Package: SOT-23
Lifecycle Status
Active
Datasheet
SI2304DS/DG,215 Datasheet
Quick Jump:
Technical Specifications
Nexperia SI2304DS/DG,215 MOSFETs technical specifications.
General
Number of Pins
3
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package
SOT-23
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pcb
3
Package Length Mm
3(Max)
Alternate Parts Comparison (SI2304DS/DG,215 vs 2N7002T,215 vs 2N7002CK,215 vs 2N7002CK)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -65°C ~ 150°C | -65°C ~ 150°C | -55°C ~ 150°C | -55°C ~ 150°C |
| Number of Pins | 3 | 3 | 3 | 3 |
| AEC Qualified | No | No | Yes | Yes |
| Automotive | No | No | Yes | Yes |
| Basic Package Type | Lead-Frame SMT | Lead-Frame SMT | Lead-Frame SMT | Lead-Frame SMT |
| Cage Code | H2HX9 | H2HX9 | H2HX9 | H2HX9 |
| Category | Power MOSFET | Power MOSFET | Small Signal | Small Signal |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Channel Type | N | N | N | N |
| Configuration | Single | Single | Single | Single |
| Jedec | TO-236AB | TO-236AB | TO-236AB | TO-236AB |
| Action |
Nexperia SI2304DS/DG,215 MOSFETs Overview
N-channel enhancement mode power MOSFET in a 3-pin SOT-23 (TO-236AB) surface-mount package. Features a maximum drain-source voltage of 30V, continuous drain current of 1.7A, and a typical gate threshold voltage of 2V. Offers low drain-source on-resistance of 117mOhm at 10V, with typical gate charge of 4.6nC and input capacitance of 147pF at 10V.
Maximum power dissipation is 830mW, operating temperature range from -65°C to 150°C.
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