Nexperia 2N7002T,215 MOSFETs
N-channel enhancement mode MOSFET, single element, 60V drain-source voltage, 0.3A continuous drain current.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2N7002T,215
Detailed Description
N-channel enhancement mode MOSFET, single element, 60V drain-source voltage, 0.3A continuous drain current. Features 5000mOhm maximum drain-source resistance at 10V and 25pF typical input capacitance at 10V. Packaged in a 3-pin SOT-23 (TO-236AB) surface-mount plastic package with gull-wing leads, measuring 3mm x 1.4mm x 1mm. Operates from -65°C to 150°C with a maximum power dissipation of 830mW.
Package
SOT-23
Key Features
Package: SOT-23
Lifecycle Status
Active
Datasheet
2N7002T,215 Datasheet
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Technical Specifications
Nexperia 2N7002T,215 MOSFETs technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package
SOT-23
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Number of Pins
3
Pcb
3
Package Length Mm
3(Max)
Package Width Mm
1.4(Max)
Package Height Mm
1(Max)
Nexperia 2N7002T,215 MOSFETs Overview
N-channel enhancement mode MOSFET, single element, 60V drain-source voltage, 0.3A continuous drain current. Features 5000mOhm maximum drain-source resistance at 10V and 25pF typical input capacitance at 10V. Packaged in a 3-pin SOT-23 (TO-236AB) surface-mount plastic package with gull-wing leads, measuring 3mm x 1.4mm x 1mm.
Operates from -65°C to 150°C with a maximum power dissipation of 830mW.
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