Nexperia PMV185XN MOSFETs
N-channel enhancement mode MOSFET, SOT-23 package, featuring 30V drain-source voltage and 1.1A continuous drain current.
Same model may have multiple batches, images only for reference.
Technical Specifications
Nexperia PMV185XN MOSFETs technical specifications.
General
Alternate Parts Comparison (PMV185XN vs PMV185XN,215 vs PMV56XN/DG,215 vs PMV33UPE,215)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -55°C ~ 150°C | -55°C ~ 150°C | -65°C ~ 150°C | -55°C ~ 150°C |
| Number of Pins | 3 | 3 | 3 | 3 |
| AEC Qualified | No | No | No | No |
| Automotive | No | No | No | No |
| Basic Package Type | Lead-Frame SMT | Lead-Frame SMT | Lead-Frame SMT | Lead-Frame SMT |
| Cage Code | H2HX9 | H2HX9 | H2HX9 | H2HX9 |
| Category | Small Signal | Small Signal | Power MOSFET | Small Signal |
| Channel Mode | Enhancement | Enhancement | Enhancement | Enhancement |
| Channel Type | N | N | N | P |
| Configuration | Single | Single | Single | Single |
| Jedec | TO-236AB | TO-236AB | TO-236AB | TO-236AB |
| Action |
Nexperia PMV185XN MOSFETs Overview
N-channel enhancement mode MOSFET, SOT-23 package, featuring 30V drain-source voltage and 1.1A continuous drain current. This surface-mount transistor offers a low gate threshold voltage of 1.5V and a maximum drain-source on-resistance of 250 mOhm at 4.5V. With a typical gate charge of 0.87 nC and input capacitance of 76 pF, it is suitable for small signal applications.
The plastic SOT-23 (TO-236AB) package measures 3mm x 1.4mm x 1mm, with a 0.95mm pin pitch and gull-wing leads.
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