Nexperia PMV56XN/DG,215 MOSFETs
N-channel enhancement mode power MOSFET, 20V drain-source voltage, 3.76A continuous drain current.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PMV56XN/DG,215
Base Model
Detailed Description
N-channel enhancement mode power MOSFET, 20V drain-source voltage, 3.76A continuous drain current. Features 85mOhm maximum drain-source resistance at 4.5V gate-source voltage and 5.4nC typical gate charge. Housed in a 3-pin SOT-23 (TO-236AB) plastic package with gull-wing leads for surface mounting. Operates across a wide temperature range of -65°C to 150°C.
Package
SOT-23
Key Features
Package: SOT-23
Lifecycle Status
Active
Datasheet
PMV56XN/DG,215 Datasheet
Quick Jump:
Technical Specifications
Nexperia PMV56XN/DG,215 MOSFETs technical specifications.
General
Number of Pins
3
Mounting Type
Surface Mount
Operating Temperature
-65°C ~ 150°C
Basic Package Type
Lead-Frame SMT
Package Family Name
SOT
Package
SOT-23
Package Description
Small Outline Transistor
Lead Shape
Gull-wing
Pcb
3
Package Length Mm
3(Max)
Alternate Parts Comparison (PMV56XN/DG,215 vs PMV56XN,215 vs PMV33UPE,215 vs PMV50UPE,215)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -65°C ~ 150°C | 150 | -55°C ~ 150°C | -55°C ~ 150°C |
| Number of Pins | 3 | 3 | 3 | 3 |
| Mounting Type | Surface Mount | -- | Surface Mount | Surface Mount |
| AEC Qualified | No | -- | No | No |
| Automotive | No | -- | No | No |
| Basic Package Type | Lead-Frame SMT | -- | Lead-Frame SMT | Lead-Frame SMT |
| Cage Code | H2HX9 | -- | H2HX9 | H2HX9 |
| Category | Power MOSFET | -- | Small Signal | Small Signal |
| Channel Mode | Enhancement | -- | Enhancement | Enhancement |
| Channel Type | N | -- | P | P |
| Configuration | Single | -- | Single | Single |
| Jedec | TO-236AB | -- | TO-236AB | TO-236AB |
| Action |
Nexperia PMV56XN/DG,215 MOSFETs Overview
N-channel enhancement mode power MOSFET, 20V drain-source voltage, 3.76A continuous drain current. Features 85mOhm maximum drain-source resistance at 4.5V gate-source voltage and 5.4nC typical gate charge. Housed in a 3-pin SOT-23 (TO-236AB) plastic package with gull-wing leads for surface mounting. Operates across a wide temperature range of -65°C to 150°C.
More Parts in MOSFETs
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.
PMV33UPE,215NexperiaP-channel MOSFET, 20V drain-source voltage, 4.4A continuous drain current, and 36mOhm maximum drain-source resistance…
PMV50UPE,215NexperiaP-channel enhancement mode MOSFET, SOT-23 package, featuring 20V drain-source voltage and 3.2A continuous drain current.