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Nexperia PMEG100V080ELPDZ Rectifier Diodes

100 V, 8 A low leakage current Schottky barrier rectifier.

90,000 ActiveNexperiaPMEG100V$0.63
PMEG100V080ELPDZ - No Image Available

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PMEG100V080ELPDZ
Manufacturer
Part Number (MPN)
PMEG100V080ELPDZ
Base Model
Detailed Description
100 V, 8 A low leakage current Schottky barrier rectifier. Features a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. This 3-terminal device, with dual terminal positions, offers a repetitive peak reverse voltage of 100 V and a minimum breakdown voltage of 100 V. The silicon diode element has a maximum power dissipation of 1.66 W.
Lifecycle Status
Active
Datasheet
PDF PMEG100V080ELPDZ Datasheet
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Ordering Code Family

PMEG100V groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

5 ordering variants listed on the family page.

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Technical Specifications

Nexperia PMEG100V080ELPDZ Rectifier Diodes technical specifications.

General

Number of Pins
3
Operating Temperature
-55 ~ 175
Terminal Position
DUAL
Number of Elements
1
Diode Element Material
SILICON
Diode Type
RECTIFIER DIODE
Rep Pk Reverse Voltage Max
100
Breakdown Voltage Min
100
Power Dissipation Max
1.66
Military Spec
False

Alternate Parts Comparison (PMEG100V080ELPDZ vs PMEG100V060ELPDZ vs PMEG100V060ELPDAZ vs PMEG100V100ELPDAZ)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Operating Temperature-55 ~ 175------
Number of Pins3------
Breakdown Voltage Min100------
Diode Element MaterialSILICON------
Diode TypeRECTIFIER DIODE------
Military SpecFalse------
Number of Elements1------
Power Dissipation Max1.66------
Rep Pk Reverse Voltage Max100------
Terminal PositionDUAL------
Action

Nexperia PMEG100V080ELPDZ Rectifier Diodes Overview

100 V, 8 A low leakage current Schottky barrier rectifier. Features a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. This 3-terminal device, with dual terminal positions, offers a repetitive peak reverse voltage of 100 V and a minimum breakdown voltage of 100 V.

The silicon diode element has a maximum power dissipation of 1.66 W.

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