Nexperia PMEG100V080ELPDZ Rectifier Diodes
100 V, 8 A low leakage current Schottky barrier rectifier.

Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
PMEG100V080ELPDZ
Base Model
Detailed Description
100 V, 8 A low leakage current Schottky barrier rectifier. Features a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. This 3-terminal device, with dual terminal positions, offers a repetitive peak reverse voltage of 100 V and a minimum breakdown voltage of 100 V. The silicon diode element has a maximum power dissipation of 1.66 W.
Lifecycle Status
Active
Datasheet
PMEG100V080ELPDZ Datasheet
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Technical Specifications
Nexperia PMEG100V080ELPDZ Rectifier Diodes technical specifications.
General
Number of Pins
3
Operating Temperature
-55 ~ 175
Terminal Position
DUAL
Number of Elements
1
Diode Element Material
SILICON
Diode Type
RECTIFIER DIODE
Rep Pk Reverse Voltage Max
100
Breakdown Voltage Min
100
Power Dissipation Max
1.66
Military Spec
False
Alternate Parts Comparison (PMEG100V080ELPDZ vs PMEG100V060ELPDZ vs PMEG100V060ELPDAZ vs PMEG100V100ELPDAZ)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Operating Temperature | -55 ~ 175 | -- | -- | -- |
| Number of Pins | 3 | -- | -- | -- |
| Breakdown Voltage Min | 100 | -- | -- | -- |
| Diode Element Material | SILICON | -- | -- | -- |
| Diode Type | RECTIFIER DIODE | -- | -- | -- |
| Military Spec | False | -- | -- | -- |
| Number of Elements | 1 | -- | -- | -- |
| Power Dissipation Max | 1.66 | -- | -- | -- |
| Rep Pk Reverse Voltage Max | 100 | -- | -- | -- |
| Terminal Position | DUAL | -- | -- | -- |
| Action |
Nexperia PMEG100V080ELPDZ Rectifier Diodes Overview
100 V, 8 A low leakage current Schottky barrier rectifier. Features a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. This 3-terminal device, with dual terminal positions, offers a repetitive peak reverse voltage of 100 V and a minimum breakdown voltage of 100 V.
The silicon diode element has a maximum power dissipation of 1.66 W.
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