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Nexperia PMEG060V100EPDZ Rectifier Diodes

60 V, 10 A low VF MEGA Schottky barrier rectifier, DFP 3-Pin.

99,999 ActiveNexperiaPMEG060V$0.97
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PMEG060V100EPDZ
Manufacturer
Part Number (MPN)
PMEG060V100EPDZ
Base Model
Detailed Description
60 V, 10 A low VF MEGA Schottky barrier rectifier, DFP 3-Pin. Features a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. This silicon rectifier diode offers a repetitive peak reverse voltage of 60 V and a minimum breakdown voltage of 60 V. With a maximum power dissipation of 1.66 W, it is a 3-terminal, single-element device.
Lifecycle Status
Active
Datasheet
PDF PMEG060V100EPDZ Datasheet
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Ordering Code Family

PMEG060V groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

3 ordering variants listed on the family page.

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Technical Specifications

Nexperia PMEG060V100EPDZ Rectifier Diodes technical specifications.

General

Number of Pins
3
Operating Temperature
-55 ~ 175
Terminal Position
DUAL
Number of Elements
1
Diode Element Material
SILICON
Diode Type
RECTIFIER DIODE
Rep Pk Reverse Voltage Max
60
Breakdown Voltage Min
60
Power Dissipation Max
1.66
Military Spec
False

Alternate Parts Comparison (PMEG060V100EPDZ vs PMEG060V050EPDZ vs PMEG060V050EPDAZ vs PMEG3005CT,215)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Operating Temperature-55 ~ 175-----55°C ~ 150°C
Number of Pins3----3
Breakdown Voltage Min60------
Diode Element MaterialSILICON------
Diode TypeRECTIFIER DIODE------
Military SpecFalse------
Number of Elements1------
Power Dissipation Max1.66------
Rep Pk Reverse Voltage Max60------
Terminal PositionDUAL------
Action

Nexperia PMEG060V100EPDZ Rectifier Diodes Overview

60 V, 10 A low VF MEGA Schottky barrier rectifier, DFP 3-Pin. Features a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. This silicon rectifier diode offers a repetitive peak reverse voltage of 60 V and a minimum breakdown voltage of 60 V.

With a maximum power dissipation of 1.66 W, it is a 3-terminal, single-element device.

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