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Micron Technology Inc. NAND02GW3B2DN6 Flash Memory

IC FLASH 2GBIT 48TSOP

2,564 ActiveMicron Technology Inc.Tray$26.65
NAND02GW3B2DN6 - No Image Available

Same model may have multiple batches, images only for reference.

NAND02GW3B2DN6
Part Number (MPN)
NAND02GW3B2DN6
Detailed Description
IC FLASH 2GBIT 48TSOP
Package
Tray
Lifecycle Status
Active
Datasheet
PDF NAND02GW3B2DN6 Datasheet
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Technical Specifications

Micron Technology Inc. NAND02GW3B2DN6 Flash Memory technical specifications.

General

Memory Size
2Gb (256M x 8)
Packaging
Tray
Mounting Type
SMD (SMT)
Access Time
25ns
Technology
FLASH - NAND
Supply Voltage Operating
2.7 V to 3.6 V
Memory Format
FLASH
Temperature Range Operating
-40°C to 85°C (TA)

Alternate Parts Comparison (NAND02GW3B2DN6 vs PN28F256M29EWHA vs JS28F256P30TFE vs JS28F640J3D75)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Memory Size2Gb (256M x 8)256 Mbit256Mb (16M x 16)64Mb (8M x 8, 4M x 16)
Access Time25ns100 ns110ns75ns
Memory FormatFLASHFLASHFLASHFLASH
TechnologyFLASH - NANDFLASH - NORFLASH - NORFLASH - NOR
Mounting TypeSMD (SMT)--SMD (SMT)SMD (SMT)
Supply Voltage Operating2.7 V to 3.6 V--1.7 V to 2 V2.7 V to 3.6 V
Temperature Range Operating-40°C to 85°C (TA)---40°C to 85°C (TA)-40°C to 85°C (TA)
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