Micron Technology Inc. NAND02GW3B2DN6 Flash Memory
IC FLASH 2GBIT 48TSOP

Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
NAND02GW3B2DN6
Detailed Description
IC FLASH 2GBIT 48TSOP
Package
Tray
Lifecycle Status
Active
Datasheet
NAND02GW3B2DN6 Datasheet
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Technical Specifications
Micron Technology Inc. NAND02GW3B2DN6 Flash Memory technical specifications.
General
Memory Size
2Gb (256M x 8)
Packaging
Tray
Mounting Type
SMD (SMT)
Access Time
25ns
Technology
FLASH - NAND
Supply Voltage Operating
2.7 V to 3.6 V
Memory Format
FLASH
Temperature Range Operating
-40°C to 85°C (TA)
Alternate Parts Comparison (NAND02GW3B2DN6 vs PN28F256M29EWHA vs JS28F256P30TFE vs JS28F640J3D75)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Memory Size | 2Gb (256M x 8) | 256 Mbit | 256Mb (16M x 16) | 64Mb (8M x 8, 4M x 16) |
| Access Time | 25ns | 100 ns | 110ns | 75ns |
| Memory Format | FLASH | FLASH | FLASH | FLASH |
| Technology | FLASH - NAND | FLASH - NOR | FLASH - NOR | FLASH - NOR |
| Mounting Type | SMD (SMT) | -- | SMD (SMT) | SMD (SMT) |
| Supply Voltage Operating | 2.7 V to 3.6 V | -- | 1.7 V to 2 V | 2.7 V to 3.6 V |
| Temperature Range Operating | -40°C to 85°C (TA) | -- | -40°C to 85°C (TA) | -40°C to 85°C (TA) |
| Action |
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