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Micron Technology Inc. MT53E512M32D1ZW-046BAUT:B DRAM

DRAM Memory IC 16Gbit Parallel 2.133 GHz 1.06V ~ 1.17V 200-TFBGA (10x14.5)

In Stock ActiveMicron Technology Inc.200-TFBGA (10x14.5)RoHS
MT53E512M32D1ZW-046BAUT:B 200-TFBGA (10x14.5) package illustration

Same model may have multiple batches, images only for reference.

MT53E512M32D1ZW-046BAUT:B
Part Number (MPN)
MT53E512M32D1ZW-046BAUT:B
Detailed Description
IC DRAM 16GBIT 2.133GHZ 200WFBGA
Package
200-TFBGA (10x14.5)
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF MT53E512M32D1ZW-046BAUT:B Datasheet
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Technical Specifications

Micron Technology Inc. MT53E512M32D1ZW-046BAUT:B DRAM technical specifications.

General

Series
Automotive, AEC-Q100
Memory Size
16Gbit
Data Bus Width
32 bit
Maximum Clock Frequency
2.133 GHz
RoHS
Compliant
Package / Case
200-TFBGA
Packaging
Tray
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 125°C (TC)
Supply Voltage
1.06V ~ 1.17V

Related Parts Comparison (MT53E512M32D1ZW-046BAUT:B vs MT53E512M32D1ZW-046BWT:B vs MT53E512M32D1ZW-046BIT:B vs MT28EW512ABA1HPC-0SIT)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Package / Case200-TFBGA200-TFBGA200-TFBGA64-LBGA
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-40°C ~ 125°C (TC)-25 ~ 85-40 ~ 95-40°C ~ 85°C (TA)
Supply Voltage1.06V ~ 1.17V1.7/1.06 ~ 1.17/1.951.06/1.7 ~ 1.17/1.952.7V ~ 3.6V
Memory Size16Gbit16G16G512M
Data Bus Width32 bit16 bit32 bit8 bit/16 bit
RoHSCompliantCompliantCompliantCompliant
Lifecycle StatusActiveActiveActiveActive
Fbga Marking CodeD8FLVD8FLPD8FLQRB143
Number of Bits Word Bit3232328/16
Organization512 M x 32512Mx32512Mx3264 M x 8/32 M x 16
Maximum Clock Frequency2.133 GHz2.133 GHz2.133 GHz--
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