Micron Technology Inc. MT47H512M4THN-25E:M DRAM
IC DRAM 2GBIT PARALLEL 63FBGA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MT47H512M4THN-25E:M
Detailed Description
IC DRAM 2GBIT PARALLEL 63FBGA
Package
63-TFBGA
Lifecycle Status
Obsolete
Datasheet
MT47H512M4THN-25E:M Datasheet
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Technical Specifications
Micron Technology Inc. MT47H512M4THN-25E:M DRAM technical specifications.
General
Memory Size
2Gb (512M x 4)
Package / Case
63-TFBGA
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 85°C (TC)
Supply Voltage
1.7V ~ 1.9V
Lifecycle Status
Obsolete
Fbga Marking Code
D9RVJ
MSL Level
3 (168 Hours)
Quantity Per Package
1518
Operating Temperature Range
0°C ~ 85°C (TC)
Alternate Parts Comparison (MT47H512M4THN-25E:M vs MT25QU512ABB8E12-0AAT vs MT28FW02GBBA1HPC-0AAT vs MT28EW512ABA1HPC-0SIT)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 63-TFBGA | 24-TBGA | 64-LBGA | 64-LBGA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 0°C ~ 85°C (TC) | -40°C ~ 105°C (TA) | -40°C ~ 105°C (TA) | -40°C ~ 85°C (TA) |
| Supply Voltage | 1.7V ~ 1.9V | 1.7V ~ 2V | 1.7V ~ 3.6V | 2.7V ~ 3.6V |
| Memory Size | 2Gb (512M x 4) | 512Mb (64M x 8) | 2G | 512M |
| Lifecycle Status | Obsolete | Active | Active | Active |
| Fbga Marking Code | D9RVJ | RW231 | RB175 | RB143 |
| Memory Format | DRAM | Flash | FLASH | FLASH |
| Memory Interface | Parallel | SPI | Parallel | Parallel |
| Memory Type | Volatile | Non-Volatile | Non-Volatile | Non-Volatile |
| Package | 63-TFBGA | 24-TBGA | BGA | BGA |
| Technology | SDRAM - DDR2 | FLASH - NOR | FLASH - NOR | FLASH - NOR |
| Action |
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