Micron Technology Inc. MT41K512M8V00HWC1 DRAM
IC DRAM 4GBIT PARALLEL DIE
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MT41K512M8V00HWC1
Detailed Description
IC DRAM 4GBIT PARALLEL DIE
Package
Bulk
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
MT41K512M8V00HWC1 Datasheet
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Technical Specifications
Micron Technology Inc. MT41K512M8V00HWC1 DRAM technical specifications.
General
Manufacturer
Micron Technology Inc.
Memory Size
4Gbit
RoHS
ROHS3 Compliant
Packaging
Bulk
Operating Temperature
0°C ~ 95°C (TC)
Supply Voltage
1.283V ~ 1.45V
Lifecycle Status
Active
Memory Interface
Parallel
Memory Organization
512M x 8
Memory Type
Volatile
Alternate Parts Comparison (MT41K512M8V00HWC1 vs MT53B256M32D1Z91MWC1 vs MT46H1DAMA-DC vs MT53D384M16D1Z1AMWC1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Manufacturer | Micron Technology Inc. | Micron Technology Inc. | Micron Technology Inc. | Micron Technology Inc. |
| Lifecycle Status | Active | Obsolete | Obsolete | Active |
| Base Product Number | MT41K512M8 | MT53B256 | MT46H1D | MT53D384 |
| RoHS | ROHS3 Compliant | -- | ROHS3 Compliant | Supplier Unconfirmed |
| Operating Temperature | 0°C ~ 95°C (TC) | -- | -- | -- |
| Supply Voltage | 1.283V ~ 1.45V | -- | -- | -- |
| Memory Size | 4Gbit | -- | -- | -- |
| Automotive | No | -- | -- | -- |
| Memory Format | DRAM | -- | -- | -- |
| Memory Interface | Parallel | -- | -- | -- |
| Memory Organization | 512M x 8 | -- | -- | -- |
| Memory Type | Volatile | -- | -- | -- |
| Action |
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