Micron Technology Inc. MT40A512M16JY-062E:B DRAM

Name: MT40A512M16JY-062E:B
Brand: Micron Technology Inc.
SKU: MT40A512M16JY-062E:B
Price: 188.41 USD
Availability: InStock

DRAM Memory IC 8Gbit Parallel 1.6 GHz 1.14V ~ 1.26V 96-FBGA (8x14)

19Micron Technology Inc.96-FBGA (8x14)$188.41RoHS

Same model may have multiple batches, images only for reference.

MT40A512M16JY-062E:B

Manufacturer

Micron Technology Inc.

Part Number (MPN)

MT40A512M16JY-062E:B

Technical Specifications

Micron Technology Inc. MT40A512M16JY-062E:B DRAM technical specifications.

General

Memory Size

8Gbit

RoHS

ROHS3 Compliant

Package / Case

96-TFBGA

Packaging

Tray

Mounting Type

Surface Mount

Operating Temperature

0°C ~ 95°C (TC)

Supply Voltage

1.14V ~ 1.26V

Lifecycle Status

Obsolete

Fbga Marking Code

D9VJP

Max Frequency

1.6 GHz

Related Parts Comparison (MT40A512M16JY-062E:B vs MT41K256M16TW-93:P vs MT40A1G16WBU-083E:B vs MT41J128M16JT-107:K)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

	This Part	Related Part	Related Part	Related Part
	Micron Technology Inc.MT40A512M16JY-062E:B	Micron Technology Inc.MT41K256M16TW-93:P	Micron Technology Inc.MT40A1G16WBU-083E:B	Micron Technology Inc.MT41J128M16JT-107:K
Package / Case	96-TFBGA	96-TFBGA	96-TFBGA	96-TFBGA
Mounting Type	Surface Mount	Surface Mount	Surface Mount	Surface Mount
Operating Temperature	0°C ~ 95°C (TC)	0°C ~ 95°C (TC)	0°C ~ 95°C (TC)	0°C ~ 95°C (TC)
Supply Voltage	1.14V ~ 1.26V	1.283V ~ 1.45V	1.14V ~ 1.26V	1.425V ~ 1.575V
Memory Size	8Gbit	4Gbit	16Gbit	2Gbit
RoHS	ROHS3 Compliant	ROHS3 Compliant	Yes	ROHS3 Compliant
Lifecycle Status	Obsolete	Active	Obsolete	Obsolete
Clock Frequency	1.6 GHz	1.066 GHz	1.2 GHz	933 MHz
Max Frequency	1.6 GHz	1.066 GHz	1.2 GHz	933 MHz
Memory Format	DRAM	DRAM	DRAM	DRAM
Memory Interface	Parallel	Parallel	Parallel	Parallel
Memory Organization	512M x 16	256M x 16	1G x 16	128M x 16
Action	RFQ	RFQ	RFQ	RFQ

More Parts in DRAM

Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.

MT41J128M16JT-107:K Micron Technology Inc.

DRAM Memory IC 2Gbit Parallel 933 MHz 1.425V ~ 1.575V 96-FBGA (8x14)

MT41J64M16JT-125:G Micron Technology Inc.

DRAM Memory IC 1Gbit Parallel 800 MHz 1.425V ~ 1.575V 96-FBGA (8x14)

MT41J128M16JT-107G:K Micron Technology Inc.

DRAM Memory IC 2Gbit Parallel 933 MHz 1.425V ~ 1.575V 96-FBGA (8x14)

MT41K128M16JT-107G:K Micron Technology Inc.

DRAM Memory IC 2Gbit Parallel 933 MHz 1.283V ~ 1.45V 96-FBGA (8x14)

MT41J64M16JT-187E:G Micron Technology Inc.

DRAM Memory IC 1Gbit Parallel 533 MHz 1.425V ~ 1.575V 96-FBGA (8x14)

MT41K64M16JT-125:G Micron Technology Inc.

DRAM Memory IC 1Gbit Parallel 800 MHz 1.283V ~ 1.45V 96-FBGA (8x14)

MT41K256M16TW-125:P Micron Technology Inc.

DRAM Memory IC 4Gbit Parallel 800 MHz 1.283V ~ 1.45V 96-FBGA (8x14)

MT40A1G16WBU-083E:B Micron Technology Inc.

DRAM Memory IC 16Gbit Parallel 1.2 GHz 1.14V ~ 1.26V 96-FBGA (8x14)

MT41K64M16TW-125:J Micron Technology Inc.

DRAM Memory IC 1Gbit Parallel 800 MHz 1.283V ~ 1.45V 96-FBGA (8x14)

MT41J64M16JT-107:G Micron Technology Inc.

DRAM Memory IC 1Gbit Parallel 933 MHz 1.425V ~ 1.575V 96-FBGA (8x14)

MT40A1G16WBU-075E:B Micron Technology Inc.

DRAM Memory IC 16Gbit Parallel 1.33 GHz 1.14V ~ 1.26V 96-FBGA (8x14)

MT41K256M16TW-93:P Micron Technology Inc.

DRAM Memory IC 4Gbit Parallel 1.066 GHz 1.283V ~ 1.45V 96-FBGA (8x14)