Micron Technology Inc. MT40A2G4WE-075E:D DRAM
DRAM Memory IC 8Gbit Parallel 1.33 GHz 1.14V ~ 1.26V 78-FBGA (8x12)
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MT40A2G4WE-075E:D
Detailed Description
IC DRAM 8GBIT PARALLEL 78FBGA
Package
78-FBGA (8x12)
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
MT40A2G4WE-075E:D Datasheet
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Technical Specifications
Micron Technology Inc. MT40A2G4WE-075E:D DRAM technical specifications.
General
Memory Size
8Gbit
RoHS
ROHS3 Compliant
Package / Case
78-TFBGA
Packaging
Tray
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 95°C (TC)
Supply Voltage
1.14V ~ 1.26V
Lifecycle Status
Obsolete
Fbga Marking Code
D9TZX
Max Frequency
1.33 GHz
Related Parts Comparison (MT40A2G4WE-075E:D vs MT28FW02GBBA1HPC-0AAT vs MT28EW512ABA1HPC-0SIT vs MT25QU512ABB8E12-0AAT)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Package / Case | 78-TFBGA | 64-LBGA | 64-LBGA | 24-TBGA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 0°C ~ 95°C (TC) | -40°C ~ 105°C (TA) | -40°C ~ 85°C (TA) | -40°C ~ 105°C (TA) |
| Supply Voltage | 1.14V ~ 1.26V | 1.7V ~ 3.6V | 2.7V ~ 3.6V | 1.7V ~ 2V |
| Memory Size | 8Gbit | 2G | 512M | 512Mb (64M x 8) |
| RoHS | ROHS3 Compliant | Compliant | Compliant | Compliant |
| Lifecycle Status | Obsolete | Active | Active | Active |
| Fbga Marking Code | D9TZX | RB175 | RB143 | RW231 |
| Memory Format | DRAM | FLASH | FLASH | Flash |
| Memory Interface | Parallel | Parallel | Parallel | SPI |
| Memory Organization | 2G x 4 | 128M x 16 | 64M x 8, 32M x 16 | 64M x 8 |
| Memory Type | Volatile | Non-Volatile | Non-Volatile | Non-Volatile |
| Action |
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