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Micron Technology Inc. EDB1332BDBH-1DAAT-F-R DRAM

DRAM Memory IC 1 Gb Parallel 533 MHz 1.2 V

8,691 ActiveMicron Technology Inc.FBGA$43.52RoHS
EDB1332BDBH-1DAAT-F-R FBGA package illustration

Same model may have multiple batches, images only for reference.

EDB1332BDBH-1DAAT-F-R
Part Number (MPN)
EDB1332BDBH-1DAAT-F-R
Detailed Description
DRAM Chip Mobile LPDDR2 SDRAM 1Gbit 32Mx32 1.2V/1.8V Automotive 134-Pin FBGA T/R
Package
FBGA
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF EDB1332BDBH-1DAAT-F-R Datasheet
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Technical Specifications

Micron Technology Inc. EDB1332BDBH-1DAAT-F-R DRAM technical specifications.

General

Interface
Parallel
Data Bus Width
32 b
RoHS
Compliant
Number of Pins
134
Mounting Type
Surface Mount
Operating Temperature
-40 °C ~ 105 °C
Supply Voltage
1.2 V
Fbga Marking Code
D9WTW
Max Frequency
533 MHz
Density
1 Gb

Related Parts Comparison (EDB1332BDBH-1DAAT-F-R vs EDFP264A2PB-JD-F-R vs MT47H128M16HG-3:A vs MT40A2G8SA-062E:F)

Side-by-side specifications of related catalog parts.

Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.

This PartRelated PartRelated PartRelated Part
Mounting TypeSurface MountSMD (SMT)Surface MountSurface Mount
RoHSCompliantCompliantCompliantCompliant
Operating Temperature-40 °C ~ 105 °C--0 ~ 850°C ~ 95°C (TC)
Supply Voltage1.2 V--1.81.14V ~ 1.26V
Data Bus Width32 b--16 bit8 bit
Number of Pins134--8478
Fbga Marking CodeD9WTW--D9JJBD8CJV
PackageFBGAFBGABGA--
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