Microchip Technology 1N5615US Rectifier Diodes
DIODE GEN PURP 200V 1A D-5A
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
1N5615US
Detailed Description
DIODE GEN PURP 200V 1A D-5A
Package
Package-A-2
Lifecycle Status
Active
Datasheet
1N5615US Datasheet
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Technical Specifications
Microchip Technology 1N5615US Rectifier Diodes technical specifications.
General
RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 65°C ~ + 175°C
Vr Reverse Voltage
200 V
If Forward Current
1 A
Type
Fast Recovery Rectifiers
Configuration
Single
Vf Forward Voltage
800 mV
Max Surge Current
30 A
Ir Reverse Current
500 nA
Related Parts Comparison (1N5615US vs APT30DQ60BG vs UPS360E3/TR13)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | |
|---|---|---|---|
| Mounting Type | SMD/SMT | Through Hole | Surface Mount |
| Operating Temperature | - 65°C ~ + 175°C | -55 °C ~ 175 °C | -55 °C ~ 125 °C |
| RoHS | Yes | Compliant | Compliant |
| Max Surge Current | 30 A | 320 A | -- |
| Package | Package-A-2 | TO-247 | -- |
| Recovery Time | 150 ns | 19 ns | -- |
| Configuration | Single | -- | -- |
| If Forward Current | 1 A | -- | -- |
| Ir Reverse Current | 500 nA | -- | -- |
| Type | Fast Recovery Rectifiers | -- | -- |
| Vf Forward Voltage | 800 mV | -- | -- |
| Vr Reverse Voltage | 200 V | -- | -- |
| Action |
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