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Microchip Technology 1N5615US Rectifier Diodes

DIODE GEN PURP 200V 1A D-5A

5 ActiveMicrochip TechnologyPackage-A-2$23.79
1N5615US Package-A-2 package illustration

Same model may have multiple batches, images only for reference.

1N5615US
Part Number (MPN)
1N5615US
Detailed Description
DIODE GEN PURP 200V 1A D-5A
Package
Package-A-2
Lifecycle Status
Active
Datasheet
PDF 1N5615US Datasheet
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Technical Specifications

Microchip Technology 1N5615US Rectifier Diodes technical specifications.

General

RoHS
Yes
Mounting Type
SMD/SMT
Operating Temperature
- 65°C ~ + 175°C
Vr Reverse Voltage
200 V
If Forward Current
1 A
Type
Fast Recovery Rectifiers
Configuration
Single
Vf Forward Voltage
800 mV
Max Surge Current
30 A
Ir Reverse Current
500 nA

Alternate Parts Comparison (1N5615US vs APT30DQ60BG vs UPS360E3/TR13)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate Parts
Mounting TypeSMD/SMTThrough HoleSurface Mount
Operating Temperature- 65°C ~ + 175°C-55 °C ~ 175 °C-55 °C ~ 125 °C
RoHSYesCompliantCompliant
Max Surge Current30 A320 A--
PackagePackage-A-2TO-247--
Recovery Time150 ns19 ns--
ConfigurationSingle----
If Forward Current1 A----
Ir Reverse Current500 nA----
TypeFast Recovery Rectifiers----
Vf Forward Voltage800 mV----
Vr Reverse Voltage200 V----
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