ISSI® IS43DR86400E-3DBL DRAM
DRAM Memory IC 512M Parallel 333 MHz 1.7V ~ 1.9V 60-TWBGA (8x10.5)
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IS43DR86400E-3DBL
Detailed Description
IC DRAM 512MBIT PAR 60TWBGA
Package
BGA
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
IS43DR86400E-3DBL Datasheet
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Technical Specifications
ISSI® IS43DR86400E-3DBL DRAM technical specifications.
General
Series
IS43DR86400E
Interface
SSTL_18
Memory Size
512M
Data Bus Width
8 bit
Maximum Clock Frequency
333 MHz
RoHS
Compliant
Number of Pins
60
Package / Case
60-TFBGA
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 85°C (TC)
Alternate Parts Comparison (IS43DR86400E-3DBL vs IS42S16160J-6BLI vs IS43TR16256BL-107MBL vs IS42SM16160K-75BLI-TR)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | IS43DR86400E | IS42S16160J | IS43TR16256BL | IS42SM16160K |
| Package / Case | 60-TFBGA | 54-TFBGA | 96-TFBGA | 54-TFBGA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | 0°C ~ 85°C (TC) | -40°C ~ 85°C (TA) | 0°C ~ 95°C (TC) | -40°C ~ 85°C (TA) |
| Supply Voltage | 1.7V ~ 1.9V | 3V ~ 3.6V | 1.283V ~ 1.45V | 2.7V ~ 3.6V |
| Memory Size | 512M | 256M | 4G | 256M |
| Maximum Clock Frequency | 333 MHz | 166 MHz | 933 MHz | 133 MHz |
| Data Bus Width | 8 bit | 16 bit | 16 bit | 16 bit |
| Number of Pins | 60 | 54 | 96 | 54 |
| RoHS | Compliant | Compliant | Compliant | Compliant |
| Lifecycle Status | Active | Active | Active | Active |
| Access Time | 450 ps | 5.4 ns | 20 ns | 6 ns |
| Action |
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