ISSI® IS43DR16128B-25EBLI DRAM
DRAM Memory IC 2G Parallel 400 MHz 1.7V ~ 1.9V 84-TW-BGA (10.5x13.5)
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IS43DR16128B-25EBLI
Detailed Description
IC DRAM 2GBIT PARALLEL 84TWBGA
Package
BGA
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
IS43DR16128B-25EBLI Datasheet
Quick Jump:
Technical Specifications
ISSI® IS43DR16128B-25EBLI DRAM technical specifications.
General
Interface
SSTL_18
Memory Size
2G
RoHS
Compliant
Number of Pins
84
Package / Case
84-TFBGA
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 85°C (TA)
Supply Voltage
1.7V ~ 1.9V
Lifecycle Status
Obsolete
Automotive
No
Related Parts Comparison (IS43DR16128B-25EBLI vs IS42S16160J-6BLI vs IS43TR16256BL-107MBL vs IS42SM16160K-75BLI-TR)
Side-by-side specifications of related catalog parts.
Engineering verification required. Related parts may have different electrical ratings, pinouts, footprints, and operating limits. Verify suitability for your circuit before substitution.
| This Part | Related Part | Related Part | Related Part | |
|---|---|---|---|---|
| Package / Case | 84-TFBGA | 54-TFBGA | 96-TFBGA | 54-TFBGA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -40°C ~ 85°C (TA) | -40°C ~ 85°C (TA) | 0°C ~ 95°C (TC) | -40°C ~ 85°C (TA) |
| Supply Voltage | 1.7V ~ 1.9V | 3V ~ 3.6V | 1.283V ~ 1.45V | 2.7V ~ 3.6V |
| Memory Size | 2G | 256M | 4G | 256M |
| Number of Pins | 84 | 54 | 96 | 54 |
| RoHS | Compliant | Compliant | Compliant | Compliant |
| Lifecycle Status | Obsolete | Active | Active | Active |
| Access Time | 400 ps | 5.4 ns | 20 ns | 6 ns |
| Address Bus Width Bit | 17 | 15 | 18 | 15 |
| Automotive | No | No | No | No |
| Clock Frequency | 400 MHz | 166 MHz | 933 MHz | 133 MHz |
| Action |
More Parts in DRAM
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.