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Infineon Technologies S34ML04G104BHI010 Flash Memory

Flash, 256MX16, 25ns, PBGA63, 11 X 9 MM, 1 MM HEIGHT, LOW HALOGEN AND LEAD FREE, MO-207M, BGA-63

4,497 ActiveInfineon TechnologiesBGA$7.29RoHS
S34ML04G104BHI010 - No Image Available

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S34ML04G104BHI010
Part Number (MPN)
S34ML04G104BHI010
Detailed Description
Flash, 256MX16, 25ns, PBGA63, 11 X 9 MM, 1 MM HEIGHT, LOW HALOGEN AND LEAD FREE, MO-207M, BGA-63
Package
BGA
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF S34ML04G104BHI010 Datasheet
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Technical Specifications

Infineon Technologies S34ML04G104BHI010 Flash Memory technical specifications.

General

Interface
Parallel
Memory Size
4Gb (256M x 16)
RoHS
Yes
Package / Case
BGA
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 85°C (TA)
Supply Voltage
2.7V ~ 3.6V
Address Bus Width
29b
Density
4Gb
Lead Free
Lead Free

Alternate Parts Comparison (S34ML04G104BHI010 vs S29GL064A90FFIR20 vs S29AL016J70BFI020 vs S29AL008J70BFI020)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / CaseBGABGA48-VFBGA48-VFBGA
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-40°C ~ 85°C (TA)-40°C ~ 85°C-40°C ~ 85°C (TA)-40°C ~ 85°C (TA)
Supply Voltage2.7V ~ 3.6V3V ~ 3.6V3/3.33/3.3
InterfaceParallelParallelParallelParallel
RoHSYesYesCompliantCompliant
Memory TypeSLC NAND,NOR,Non-VolatileNon-Volatile
Memory Size4Gb (256M x 16)--16M8M
Memory FormatFlash--FlashFlash
Memory InterfaceParallel--ParallelParallel
TechnologyFLASH - NAND--FLASH - NORFLASH - NOR
Write Cycle Time Word Page25ns--70ns70ns
Action

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