Infineon Technologies IRS2308PBF Gate Drivers
IC GATE DRVR HALF-BRIDGE 8DIP
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
IRS2308PBF
Detailed Description
IC GATE DRVR HALF-BRIDGE 8DIP
Package
8-DIP (0.300", 7.62mm)
Key Features
Package / Case: 8-DIP (0.300", 7.62mm); Mounting Type: Through Hole
Lifecycle Status
Not For New Designs
RoHS State
RoHS Compliant
Datasheet
IRS2308PBF Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies IRS2308PBF Gate Drivers technical specifications.
General
RoHS
Yes
Package / Case
8-DIP
Mounting Type
Through Hole
Operating Temperature
-40°C ~ 150°C (TJ)
Supply Voltage
10V ~ 20V
Lifecycle Status
Not For New Designs
Input Type
Non-Inverting
Channel Type
Independent
Driven Configuration
Half-Bridge
Number of Drivers
2
Alternate Parts Comparison (IRS2308PBF vs IRS2003PBF vs IRS2004PBF vs IRS2001PBF)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 8-DIP | 8-DIP | 8-DIP | 8-DIP |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Supply Voltage | 10V ~ 20V | 10V ~ 20V | 10V ~ 20V | 10V ~ 20V |
| RoHS | Yes | Yes | Yes | Yes |
| Lifecycle Status | Not For New Designs | Active | Active | Not For New Designs |
| Channel Type | Independent | Independent | Synchronous | Independent |
| Current Peak Output Source Sink | 290mA, 600mA | 290mA, 600mA | 290mA, 600mA | 290mA, 600mA |
| Driven Configuration | Half-Bridge | Half-Bridge | Half-Bridge | Half-Bridge |
| Gate Type | IGBT, N-Channel MOSFET | IGBT, N-Channel MOSFET | IGBT, N-Channel MOSFET | IGBT, N-Channel MOSFET |
| High Side Voltage Max Bootstrap | 600 V | 200 V | 200 V | 200 V |
| Input Type | Non-Inverting | Inverting, Non-Inverting | Non-Inverting | Non-Inverting |
| Action |
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