Infineon Technologies BFP640ESDH6327 RF BJT
Robust High Performance Low Noise Bipolar RF Transistor
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BFP640ESDH6327
Detailed Description
Package
--
Lifecycle Status
Unknown
RoHS State
Unknown
Datasheet
BFP640ESDH6327 Datasheet
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BFP720ESDH6327Infineon TechnologiesPackage / Case: SC-82A, SOT-343 | Supplier Device Package: PG-SOT343-4-2 | Transistor Type: NPN | Frequency - Transition: 43GHz | Voltage - Collector Emitter Breakdown (Max): 4.7V | Current - Collector (Ic) (Max): 30mA | Power - Max: 100mW | Gain: 11dB ~ 30.5dB
