Infineon Technologies 1EDN7511BXUSA1 Gate Drivers
IC GATE DRV HALF BRD/LOW SOT23-6
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
1EDN7511BXUSA1
Detailed Description
IC GATE DRV HALF BRD/LOW SOT23-6
Package
SOT-23-6
Key Features
Package / Case: SOT-23-6; Mounting Type: Surface Mount
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
1EDN7511BXUSA1 Datasheet
Quick Jump:
Technical Specifications
Infineon Technologies 1EDN7511BXUSA1 Gate Drivers technical specifications.
General
RoHS
Yes
Package / Case
SOT-23-6
Packaging
TAPE & REEL
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 150°C (TJ)
Supply Voltage
4.5V ~ 20V
Lifecycle Status
Active
Input Type
Inverting, Non-Inverting
Channel Type
Single
Driven Configuration
Half-Bridge, Low-Side
Alternate Parts Comparison (1EDN7511BXUSA1 vs 1EDN9550BXTSA1 vs 1EDN6550BXTSA1 vs 1EDN7550BXTSA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SOT-23-6 | SOT-23-6 | SOT-23-6 | SOT-23-6 |
| Mounting Type | Surface Mount | SMD/SMT | Surface Mount | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Supply Voltage | 4.5V ~ 20V | 4.5V ~ 20V | 4.5V ~ 20V | 4.5V ~ 20V |
| RoHS | Yes | Yes | Yes | Yes |
| Lifecycle Status | Active | Active | Active | Active |
| Channel Type | Single | Single | Single | Single |
| Current Peak Output Source Sink | 4A, 8A | 5.2A, 9.4A | 5.2A, 9.4A | 4A, 8A |
| Driven Configuration | Half-Bridge, Low-Side | High-Side and Low-Side | High-Side and Low-Side | High-Side |
| Gate Type | N-Channel, P-Channel MOSFET | N-Channel MOSFET, SiC MOSFET | N-Channel MOSFET, SiC MOSFET | N-Channel, P-Channel MOSFET |
| Input Type | Inverting, Non-Inverting | Inverting, Non-Inverting | Inverting, Non-Inverting | Non-Inverting |
| Number of Drivers | 1 | 2 | 2 | 1 |
| Action |
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