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CEL (California Eastern Laboratories) R1WV6416RBG-5SI#B0 SRAM

SRAM Memory IC 64M Parallel 3V 48-TFBGA (8.5x11)

In StockCEL (California Eastern Laboratories)FBGARoHS
R1WV6416RBG-5SI#B0 FBGA package illustration

Same model may have multiple batches, images only for reference.

R1WV6416RBG-5SI#B0
Part Number (MPN)
R1WV6416RBG-5SI#B0
Detailed Description
SRAM Chip Async Single 3V 64M-bit 8M/4M x 8/16-bit 55ns 48-Pin FBGA Tray
Package
FBGA
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
PDF R1WV6416RBG-5SI#B0 Datasheet
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Technical Specifications

CEL (California Eastern Laboratories) R1WV6416RBG-5SI#B0 SRAM technical specifications.

General

Memory Size
64M
RoHS
Compliant
Number of Pins
48
Package / Case
48-TFBGA
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 85°C (TA)
Supply Voltage
3
Lifecycle Status
Obsolete
PPAP
No
Operating Current Ma
60

Alternate Parts Comparison (R1WV6416RBG-5SI#B0 vs CY7C1021V33-15ZC vs K4S641632K-UC60 vs CY7C1021CV33-10ZXC)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case48-TFBGA--TSOP44-TSOP
Supply Voltage3--3 V ~ 3.6 V3V ~ 3.6V
RoHSCompliant--YesROHS3 Compliant
Access Time55 ns--6ns10 ns
Number of Ports1--11
TechnologySRAM--CMOSSRAM - Asynchronous
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