Analog Devices MAX8552ETB+T Gate Drivers
IC GATE DRVR HALF-BRIDGE 10TDFN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MAX8552ETB+T
Detailed Description
IC GATE DRVR HALF-BRIDGE 10TDFN
Package
10-WFDFN Exposed Pad
Key Features
Package / Case: 10-WFDFN Exposed Pad; Mounting Type: Surface Mount
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
MAX8552ETB+T Datasheet
Quick Jump:
Technical Specifications
Analog Devices MAX8552ETB+T Gate Drivers technical specifications.
General
Package / Case
10-WFDFN Exposed Pad
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 150°C (TJ)
Supply Voltage
4.5V ~ 6.5V
Lifecycle Status
Active
Input Type
Non-Inverting
Channel Type
Synchronous
Driven Configuration
Half-Bridge
Number of Drivers
2
Gate Type
N-Channel MOSFET
Alternate Parts Comparison (MAX8552ETB+T vs MAX15024CATB+ vs MAX15025EATB+T vs MAX15025DATB+T)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 10-WFDFN Exposed Pad | 10-WFDFN Exposed Pad | 10-WFDFN Exposed Pad | 10-WFDFN Exposed Pad |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 125°C (TJ) | -40°C ~ 150°C (TJ) | -40°C ~ 150°C (TJ) |
| Supply Voltage | 4.5V ~ 6.5V | 4.5V ~ 28V | 4.5V ~ 28V | 6.5V ~ 28V |
| Channel Type | Synchronous | Single | Independent | Independent |
| Driven Configuration | Half-Bridge | Low-Side | Low-Side | Low-Side |
| Gate Type | N-Channel MOSFET | N-Channel MOSFET | N-Channel MOSFET | N-Channel MOSFET |
| Input Type | Non-Inverting | Inverting, Non-Inverting | Inverting, Non-Inverting | Inverting, Non-Inverting |
| Rise Fall Time Typ | 14ns, 9ns | 3ns, 3ns | 48ns, 32ns | 48ns, 32ns |
| Mounting Type | Surface Mount | -- | Surface Mount | Surface Mount |
| Number of Drivers | 2 | 2 | 2 | 2 |
| Current Peak Output Source Sink | -- | 4A, 8A | 2A, 4A | 2A, 4A |
| Action |
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