Analog Devices DS2704RQ-C0B+TR EEPROM
EEPROM Memory IC 1.25Kbit 1-Wire® 2.5V ~ 5.5V 8-TDFN (2x3)
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
DS2704RQ-C0B+TR
Detailed Description
IC EEPROM 1.25KBIT 1-WIRE 8TDFN
Package
8-TDFN (2x3)
Lifecycle Status
Active
RoHS State
Not applicable
Datasheet
DS2704RQ-C0B+TR Datasheet
Quick Jump:
Technical Specifications
Analog Devices DS2704RQ-C0B+TR EEPROM technical specifications.
General
Memory Size
1.25Kbit
RoHS
Not applicable
Package / Case
8-WFDFN Exposed Pad
Packaging
Bulk
Mounting Type
Surface Mount
Operating Temperature
-30°C ~ 85°C (TA)
Supply Voltage
2.5V ~ 5.5V
Lifecycle Status
Active
Memory Interface
1-Wire®
Memory Organization
32 Bytes x 5 pages
Alternate Parts Comparison (DS2704RQ-C0B+TR vs DS1230Y-120+ vs DS1249Y-70# vs DS1230AB-100+)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 8-WFDFN Exposed Pad | 28-DIP Module | 32-DIP Module | 28-DIP Module |
| Mounting Type | Surface Mount | Through Hole | Through Hole | Through Hole |
| Operating Temperature | -30°C ~ 85°C (TA) | 0°C ~ 70°C (TA) | 0°C ~ 70°C (TA) | 0°C ~ 70°C (TA) |
| Supply Voltage | 2.5V ~ 5.5V | 4.5V ~ 5.5V | 4.5V ~ 5.5V | 4.75V ~ 5.25V |
| Memory Size | 1.25Kbit | 256Kb (32K x 8) | 2Mb (256K x 8) | 256Kb (32K x 8) |
| RoHS | Not applicable | Compliant | Compliant with Exemption | Compliant |
| Lifecycle Status | Active | Active | Active | Active |
| Memory Format | EEPROM | NVSRAM | NVSRAM | NVSRAM |
| Memory Interface | 1-Wire® | Parallel | Parallel | Parallel |
| Memory Type | Non-Volatile | Non-Volatile | Non-Volatile | Non-Volatile |
| Technology | EEPROM | NVSRAM (Non-Volatile SRAM) | NVSRAM (Non-Volatile SRAM) | NVSRAM (Non-Volatile SRAM) |
| Write Cycle Time Word Page | 1µs | 120ns | 70ns | 100ns |
| Action |
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