Winbond Electronics W66BQ6NBUAFJ DRAM
IC DRAM 2GBIT LVSTL 11 200WFBGA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
W66BQ6NBUAFJ
Detailed Description
Package
BGA
Key Features
Package: BGA; Package / Case: 200-WFBGA; Mounting Type: Surface Mount; Supply Voltage: 1.06V ~ 1.17V, 1.7V ~ 1.95V; Memory Size: 2G; Interface: LVSTL_11
Lifecycle Status
LTB
RoHS State
Compliant
Datasheet
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Technical Specifications
Winbond Electronics W66BQ6NBUAFJ DRAM technical specifications.
General
RoHS
Compliant
ECCN
EAR99
Lifecycle Status
LTB
HTS
8542.32.00.36
Dram Type
Mobile LPDDR4X SDRAM
Memory Size
2G
Organization
128Mx16
Number of Internal Banks
8
Number of Words Per Bank
16M
Number of Bits Word Bit
16
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