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Vishay SI9912DY-T1-E3 Gate Drivers

IC GATE DRVR HALF-BRIDGE 8SOIC

684Vishay8-SOIC (0.154", 3.90mm Width)RoHS
SI9912DY-T1-E3 - No Image Available

Same model may have multiple batches, images only for reference.

SI9912DY-T1-E3
Manufacturer
Part Number (MPN)
SI9912DY-T1-E3
Detailed Description
IC GATE DRVR HALF-BRIDGE 8SOIC
Package
8-SOIC (0.154", 3.90mm Width)
Key Features
Package / Case: 8-SOIC (0.154", 3.90mm Width); Mounting Type: Surface Mount
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
PDF SI9912DY-T1-E3 Datasheet
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Technical Specifications

Vishay SI9912DY-T1-E3 Gate Drivers technical specifications.

General

Package / Case
8-SOIC
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 125°C (TJ)
Supply Voltage
4.5V ~ 5.5V
Input Type
Non-Inverting
Channel Type
Synchronous
Driven Configuration
Half-Bridge
Number of Drivers
2
Gate Type
N-Channel MOSFET
Current Peak Output Source Sink
1A, 1A

Alternate Parts Comparison (SI9912DY-T1-E3 vs SI9913DY-T1-E3 vs SI9910DY-E3 vs SIP32461DB-T2-GE1)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case8-SOIC8-SOIC8-SOIC4-UFBGA
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-40°C ~ 125°C (TJ)-40°C ~ 125°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 85°C (TA)
Supply Voltage4.5V ~ 5.5V4.5V ~ 5.5V10.8V ~ 16.5VNot Required
Input TypeNon-InvertingNon-InvertingNon-InvertingNon-Inverting
Channel TypeSynchronousSynchronousSingle--
Current Peak Output Source Sink1A, 1A1A, 1A1A, 1A--
Driven ConfigurationHalf-BridgeHalf-BridgeHigh-Side--
Gate TypeN-Channel MOSFETN-Channel MOSFETN-Channel MOSFET--
High Side Voltage Max Bootstrap30 V30 V500 V--
Number of Drivers221--
Rise Fall Time Typ30ns, 20ns30ns, 20ns50ns, 35ns--
Action

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