Vishay SI9910DY-E3 Gate Drivers
IC GATE DRVR HIGH-SIDE 8SOIC
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
SI9910DY-E3
Detailed Description
IC GATE DRVR HIGH-SIDE 8SOIC
Package
8-SOIC (0.154", 3.90mm Width)
Key Features
Package / Case: 8-SOIC (0.154", 3.90mm Width); Mounting Type: Surface Mount
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
SI9910DY-E3 Datasheet
Quick Jump:
Technical Specifications
Vishay SI9910DY-E3 Gate Drivers technical specifications.
General
Package / Case
8-SOIC
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 150°C (TJ)
Supply Voltage
10.8V ~ 16.5V
Input Type
Non-Inverting
Channel Type
Single
Driven Configuration
High-Side
Number of Drivers
1
Gate Type
N-Channel MOSFET
Current Peak Output Source Sink
1A, 1A
Alternate Parts Comparison (SI9910DY-E3 vs SI9913DY-T1-E3 vs SI9912DY-T1-E3 vs SIP32461DB-T2-GE1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 8-SOIC | 8-SOIC | 8-SOIC | 4-UFBGA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) | -40°C ~ 125°C (TJ) | -40°C ~ 125°C (TJ) | -40°C ~ 85°C (TA) |
| Supply Voltage | 10.8V ~ 16.5V | 4.5V ~ 5.5V | 4.5V ~ 5.5V | Not Required |
| Input Type | Non-Inverting | Non-Inverting | Non-Inverting | Non-Inverting |
| Channel Type | Single | Synchronous | Synchronous | -- |
| Current Peak Output Source Sink | 1A, 1A | 1A, 1A | 1A, 1A | -- |
| Driven Configuration | High-Side | Half-Bridge | Half-Bridge | -- |
| Gate Type | N-Channel MOSFET | N-Channel MOSFET | N-Channel MOSFET | -- |
| High Side Voltage Max Bootstrap | 500 V | 30 V | 30 V | -- |
| Number of Drivers | 1 | 2 | 2 | -- |
| Rise Fall Time Typ | 50ns, 35ns | 30ns, 20ns | 30ns, 20ns | -- |
| Action |
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