Texas Instruments TLV2365DR Integrated Circuits (ICs)
Supply Span Max: 5.5 V Number of Channels per Chip: 2 BW at Acl (MHz): 80 Rail-to-rail: In, Out Product: High-Speed CMOS Operational Amplifiers PPAP: No Gain Bandwidth Product: …
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Manufacturer
Part Number (MPN)
TLV2365DR
Category
Integrated Circuits (ICs)Texas Instruments TLV2365DR
Detailed Description
Package
--
Lifecycle Status
Unknown
RoHS State
Unknown
Datasheet
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Technical Specifications
Texas Instruments TLV2365DR Integrated Circuits (ICs) technical specifications.
General
Supply Span Max
5.5 V Number of Channels per Chip: 2 BW at Acl (MHz): 80 Rail-to-rail: In, Out Product: High-Speed CMOS Operational Amplifiers PPAP: No Gain Bandwidth Product: 50 MHz Product Status: Active Current
Input Bias
5 pA Automotive: No RoHS: RoHS Compliant Supplier Package: SOIC THD plus Noise: 0.00025 % Package / Case: 8-SOIC (0.154", 3.90mm Width) Number of Channels: 2 Channel EU RoHS: Compliant Carrier: LARGE T&R Amplifier Type: Standard Operating Temperature: -40°C ~ 125°C (TA) Architecture: FET / CMOS Input, Voltage FB Operating temperature range (°C): -40 to 125 PSRR
Power Supply Rejection Ratio
100 dB Acl, min spec gain (V/V): 1 ECCN: EAR99 Grade:
Topology
Zero-Crossover Distortion MSL rating / Peak reflow: Level-1-260C-UNLIM Mounting Type: Surface Mount Current
Supply
4.6mA (x2 Channels) Standard Package Name: SO Pin Count: 8 In
Input Noise Current Density
5.8 fA/sqrt Hz Mounting: Surface Mount Qualification:
Shutdown
No Shutdown Voltage
Supply Span Min
2.2 V SVHC: Yes HTSUS: 8542.33.0001 Package: Tape & Reel (TR) Pins: 8 Current
Output Channel
85 mA USHTS: 8542330001 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V): 5.5 GBW (typ) (MHz): 50 en
Input Voltage Noise Density
4.5 nV/sqrt Hz PCB changed: 8 Output Type: Rail-to-Rail HTS: EA Vos
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