Solid State Inc 2N5583 RF BJT
PNP SIL RF TO39
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
2N5583
Detailed Description
PNP SIL RF TO39
Package
TO-205AD, TO-39-3 Metal Can
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
2N5583 Datasheet
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Technical Specifications
Solid State Inc 2N5583 RF BJT technical specifications.
General
Package / Case
TO-205AD, TO-39-3 Metal Can
Packaging
Box
Mounting Type
Through Hole
Operating Temperature
-65°C ~ 200°C (TJ)
Voltage Collector Emitter Breakdown Max
30V
Transistor Type
PNP
Power Max
1W
Frequency Transition
1.3GHz
Dc Current Gain Hfe Min IC Vce
25 @ 100mA, 2V
Current Collector IC Max
500mA
Alternate Parts Comparison (2N5583 vs HSG1002VE-TL-E vs BFU520XVL vs MCH4021-TL-E)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | TO-205AD, TO-39-3 Metal Can | 4-SMD, Gull Wing | TO-253-4, TO-253AA | 4-SMD, Flat Leads |
| Mounting Type | Through Hole | Surface Mount | Surface Mount | Surface Mount |
| Current Collector IC Max | 500mA | 35mA | 30mA | 150mA |
| Dc Current Gain Hfe Min IC Vce | 25 @ 100mA, 2V | 100 @ 5mA, 2V | 60 @ 5mA, 8V | 60 @ 50mA, 5V |
| Frequency Transition | 1.3GHz | 38GHz | 10.5GHz | 16GHz |
| Power Max | 1W | 200mW | 450mW | 400mW |
| Transistor Type | PNP | NPN | NPN | NPN |
| Voltage Collector Emitter Breakdown Max | 30V | 3.5V | 12V | 8V |
| Operating Temperature | -65°C ~ 200°C (TJ) | -- | -40°C ~ 150°C (TJ) | 150°C (TJ) |
| Gain | -- | 8dB ~ 19.5dB | 18dB | 17.5dB |
| Noise Figure Db Typ F | -- | 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz | 1.1dB @ 1.8GHz | 1.2dB @ 1GHz |
| Action |
More Parts in RF BJT
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.