Renesas HSG1002VE-TL-E RF BJT
RF 0.035A C BAND GERMANIUM NPN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
HSG1002VE-TL-E
Detailed Description
Package
4-SMD, Gull Wing
Key Features
Package / Case: 4-SMD, Gull Wing | Supplier Device Package: 4-MFPAK | Transistor Type: NPN | Frequency - Transition: 38GHz | Voltage - Collector Emitter Breakdown (Max): 3.5V | Current - Collector (Ic) (Max): 35mA | Power - Max: 200mW | Gain: 8dB ~ 19.5dB
Lifecycle Status
Active
RoHS State
Not applicable
Datasheet
HSG1002VE-TL-E Datasheet
Quick Jump:
Technical Specifications
Renesas HSG1002VE-TL-E RF BJT technical specifications.
General
Voltage Collector Emitter Breakdown Max
3.5V
Transistor Type
NPN
Supplier Device Package
4-MFPAK
Power Max
200mW
Package / Case
4-SMD, Gull Wing
Package
Bulk
Noise Figure Db Typ F
0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Mounting Type
Surface Mount
Gain
8dB ~ 19.5dB
Frequency Transition
38GHz
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