Renesas HSG1002VE-TL-E RF BJT
RF 0.035A C BAND GERMANIUM NPN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
HSG1002VE-TL-E
Detailed Description
RF 0.035A C BAND GERMANIUM NPN
Package
4-SMD, Gull Wing
Lifecycle Status
Active
RoHS State
Not applicable
Datasheet
HSG1002VE-TL-E Datasheet
Quick Jump:
Technical Specifications
Renesas HSG1002VE-TL-E RF BJT technical specifications.
General
Package / Case
4-SMD, Gull Wing
Packaging
Bulk
Mounting Type
Surface Mount
Voltage Collector Emitter Breakdown Max
3.5V
Transistor Type
NPN
Power Max
200mW
Noise Figure Db Typ F
0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Gain
8dB ~ 19.5dB
Frequency Transition
38GHz
Dc Current Gain Hfe Min IC Vce
100 @ 5mA, 2V
Alternate Parts Comparison (HSG1002VE-TL-E vs HSG2001VF-01TL-E vs HFA3135IHZ96 vs HFA3102BZ96)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 4-SMD, Gull Wing | -- | SOT-23-6 | 14-SOIC |
| Mounting Type | Surface Mount | -- | Surface Mount | Surface Mount |
| Current Collector IC Max | 35mA | -- | 26mA | 30mA |
| Dc Current Gain Hfe Min IC Vce | 100 @ 5mA, 2V | -- | 15 @ 10mA, 2V | 40 @ 10mA, 3V |
| Frequency Transition | 38GHz | -- | 7GHz | 10GHz |
| Noise Figure Db Typ F | 0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz | -- | 5.2dB @ 900MHz | 1.8dB ~ 2.1dB @ 500MHz ~ 1GHz |
| Transistor Type | NPN | -- | 2 PNP (Dual) | 6 NPN |
| Voltage Collector Emitter Breakdown Max | 3.5V | -- | 9V | 12V |
| Action |
More Parts in RF BJT
Browse additional parts from the same category, grouped by series, package type, and manufacturer. These are catalog suggestions — not verified pin-compatible alternates.