Infineon Technologies BFP720ESDH6327 RF BJT
RF TRANSISTOR, X BAND, NPN
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BFP720ESDH6327
Detailed Description
RF TRANSISTOR, X BAND, NPN
Package
SC-82A, SOT-343
Lifecycle Status
Active
RoHS State
Not applicable
Datasheet
BFP720ESDH6327 Datasheet
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Technical Specifications
Infineon Technologies BFP720ESDH6327 RF BJT technical specifications.
General
Package / Case
SC-82A, SOT-343
Packaging
Bulk
Mounting Type
Surface Mount
Operating Temperature
150°C (TJ)
Voltage Collector Emitter Breakdown Max
4.7V
Transistor Type
NPN
Power Max
100mW
Noise Figure Db Typ F
0.55dB ~ 1.55dB @ 150MHz ~ 10GHz
Gain
11dB ~ 30.5dB
Frequency Transition
43GHz
Alternate Parts Comparison (BFP720ESDH6327 vs BFP540ESDH6327XTSA1 vs BFP650FH6327XTSA1 vs BFP540H6327XTSA1)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | SC-82A, SOT-343 | -- | -- | -- |
| Mounting Type | Surface Mount | -- | -- | -- |
| Operating Temperature | 150°C (TJ) | -- | -- | -- |
| Current Collector IC Max | 30mA | -- | -- | -- |
| Dc Current Gain Hfe Min IC Vce | 160 @ 15mA, 3V | -- | -- | -- |
| Frequency Transition | 43GHz | -- | -- | -- |
| Gain | 11dB ~ 30.5dB | -- | -- | -- |
| Noise Figure Db Typ F | 0.55dB ~ 1.55dB @ 150MHz ~ 10GHz | -- | -- | -- |
| Power Max | 100mW | -- | -- | -- |
| Transistor Type | NPN | -- | -- | -- |
| Voltage Collector Emitter Breakdown Max | 4.7V | -- | -- | -- |
| Action |
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