Samsung Semiconductor K4F6E3S4HM-MGCJ DRAM
LPDDR4 16Gb x32 3733 Mbps 1.1v
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4F6E3S4HM-MGCJ
Detailed Description
Package
200-TFBGA
Key Features
Package: Tray; Package / Case: 200-TFBGA; Mounting Type: Surface Mount; Supply Voltage: 1.1V; Memory Size: 16Gbit
Lifecycle Status
Active
RoHS State
Compliant
Datasheet
K4F6E3S4HM-MGCJ Datasheet
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Technical Specifications
Samsung Semiconductor K4F6E3S4HM-MGCJ DRAM technical specifications.
General
Max Frequency
1866 MHz
Inventory Source
Winsource
Inventory Source File
/Volumes/T7 Shield/电子元器件数据/抓取的数据/Win-Source数据/winsource_未曾下架数据_202605_1.xlsx
Inventory As of
2026-05-15
Source Manufacturer
Samsung
Source Category
Integrated Circuits (ICs) > Memory
Stock
8000
Extracted Price
92.25
Price Formula
winsource min price * 2
Operating Temperature
-25°C ~ 85°C
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K4F8E304HB-MGCJSamsung SemiconductorPackage: Tray | Package / Case: 200-TFBGA | Mounting Type: Surface Mount | Supply Voltage: 1.1V | Memory Size: 8Gbit | Operating Temperature: -25°C ~ 85°C