Samsung Semiconductor K4B4G0846E-BYMA0CV DRAM
DRAM Chip DDR3L SDRAM 4Gbit 512Mx8 1.35V/1.5V 78-Pin FBGA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4B4G0846E-BYMA0CV
Detailed Description
Package
BGA
Key Features
Package: BGA; Mounting Type: Surface Mount; Memory Size: 4G
Lifecycle Status
Obsolete
RoHS State
Compliant
Datasheet
K4B4G0846E-BYMA0CV Datasheet
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Technical Specifications
Samsung Semiconductor K4B4G0846E-BYMA0CV DRAM technical specifications.
General
RoHS
Compliant
ECCN
EAR99
Lifecycle Status
Obsolete
Automotive
No
Ppap
No
Dram Type
DDR3L SDRAM
Memory Size
4G
Organization
512Mx8
Number of Internal Banks
8
Number of Words Per Bank
64M
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