Micron Technology Inc. MT53E512M32D1ZW-046 AIT:B Memory ICs
LPDDR4 16G 512MX32 FBGA
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
MT53E512M32D1ZW-046 AIT:B
Detailed Description
Advanced Micron MT53E512M32D1ZW-046 AIT:B Memory for precision electronics.
Package
200-TFBGA
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
MT53E512M32D1ZW-046 AIT:B Datasheet
Quick Jump:
Technical Specifications
Micron Technology Inc. MT53E512M32D1ZW-046 AIT:B Memory ICs technical specifications.
General
Series
Automotive, AEC-Q100
Memory Size
16Gbit
Package / Case
200-TFBGA
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 95°C (TC)
Supply Voltage
1.06V ~ 1.17V
Technology
SDRAM - Mobile LPDDR4X
Memory Type
Volatile
Max Frequency
2.133 GHz
Access Time
3.5 ns
Alternate Parts Comparison (MT53E512M32D1ZW-046 AIT:B vs MT25QU512ABB8E12-0AAT vs MT28FW02GBBA1HPC-0AAT vs MT28EW512ABA1HPC-0SIT)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Series | Automotive, AEC-Q100 | MT25QU | MT28FW | MT28EW |
| Package / Case | 200-TFBGA | 24-TBGA | 64-LBGA | 64-LBGA |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -40°C ~ 95°C (TC) | -40°C ~ 105°C (TA) | -40°C ~ 105°C (TA) | -40°C ~ 85°C (TA) |
| Supply Voltage | 1.06V ~ 1.17V | 1.7V ~ 2V | 1.7V ~ 3.6V | 2.7V ~ 3.6V |
| Memory Size | 16Gbit | 512Mb (64M x 8) | 2G | 512M |
| Memory Format | DRAM | Flash | FLASH | FLASH |
| Memory Interface | Parallel | SPI | Parallel | Parallel |
| Memory Organization | 512M x 32 | 64M x 8 | 128M x 16 | 64M x 8, 32M x 16 |
| Memory Type | Volatile | Non-Volatile | Non-Volatile | Non-Volatile |
| Technology | SDRAM - Mobile LPDDR4X | FLASH - NOR | FLASH - NOR | FLASH - NOR |
| Write Cycle Time Word Page | 18ns | 8ms, 2.8ms | 60ns | 60ns |
| Action |
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