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Micron Technology Inc. MT47H64M8SH-25E:H TR Memory ICs

IC DRAM 512MBIT PARALLEL 60FBGA

49,394 ActiveMicron Technology Inc.60-TFBGA$0.82RoHS
MT47H64M8SH-25E:H TR - No Image Available

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MT47H64M8SH-25E:H TR
Part Number (MPN)
MT47H64M8SH-25E:H TR
Detailed Description
Advanced Micron MT47H64M8SH-25E:H TR Memory for precision electronics.
Package
60-TFBGA
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF MT47H64M8SH-25E:H TR Datasheet
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Technical Specifications

Micron Technology Inc. MT47H64M8SH-25E:H TR Memory ICs technical specifications.

General

Memory Size
512 Mbit
Package / Case
60-TFBGA
Mounting Type
Surface Mount
Operating Temperature
0°C ~ 85°C (TC)
Supply Voltage
1.7V ~ 1.9V
Technology
SDRAM - DDR2
Memory Type
Volatile
Max Frequency
400 MHz
Access Time
400 ps
Memory Format
DRAM

Alternate Parts Comparison (MT47H64M8SH-25E:H TR vs MT46V64M8BN-6:D vs MT46V128M4CY-5B:J vs MT25QU512ABB8E12-0AAT)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case60-TFBGA60-TFBGA60-TFBGA24-TBGA
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature0°C ~ 85°C (TC)0°C ~ 70°C (TA)0°C ~ 70°C (TA)-40°C ~ 105°C (TA)
Supply Voltage1.7V ~ 1.9V2.3V ~ 2.7V2.5V ~ 2.7V1.7V ~ 2V
Memory Size512 Mbit512Mb (64M x 8)512Mb (128M x 4)512Mb (64M x 8)
Max Frequency400 MHz167 MHz200 MHz133 MHz
Memory FormatDRAMDRAMDRAMFlash
Memory InterfaceParallelParallelParallelSPI
Memory TypeVolatileVolatileVolatileNon-Volatile
TechnologySDRAM - DDR2SDRAM - DDRSDRAM - DDRFLASH - NOR
Write Cycle Time Word Page15ns15ns15ns8ms, 2.8ms
Access Time400 ps700 ps700 ps--
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