Infineon Technologies BFP650H6327 RF BJT
High Linearity Silicon Germanium Bipolar RF Transistor

Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
BFP650H6327
Base Model
Detailed Description
Package
--
Lifecycle Status
Unknown
RoHS State
Unknown
Datasheet
BFP650H6327 Datasheet
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BFP720ESDH6327Infineon TechnologiesPackage / Case: SC-82A, SOT-343 | Supplier Device Package: PG-SOT343-4-2 | Transistor Type: NPN | Frequency - Transition: 43GHz | Voltage - Collector Emitter Breakdown (Max): 4.7V | Current - Collector (Ic) (Max): 30mA | Power - Max: 100mW | Gain: 11dB ~ 30.5dB