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Infineon Technologies BFP650H6327 RF BJT

High Linearity Silicon Germanium Bipolar RF Transistor

98,655Infineon TechnologiesBFP650H$0.36RoHS
BFP650H6327 - No Image Available

Same model may have multiple batches, images only for reference.

BFP650H6327
Part Number (MPN)
BFP650H6327
Base Model
Detailed Description
Package
--
Lifecycle Status
Unknown
RoHS State
Unknown
Datasheet
PDF BFP650H6327 Datasheet
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Ordering Code Family

BFP650H groups multiple orderable suffixes under one base device. Compare package, grade, and reel options on the base-number page before substituting within the family.

2 ordering variants listed on the family page.

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BFP720ESDH6327BFP720ESDH6327Infineon Technologies
Package / Case: SC-82A, SOT-343 | Supplier Device Package: PG-SOT343-4-2 | Transistor Type: NPN | Frequency - Transition: 43GHz | Voltage - Collector Emitter Breakdown (Max): 4.7V | Current - Collector (Ic) (Max): 30mA | Power - Max: 100mW | Gain: 11dB ~ 30.5dB