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Infineon Technologies AUIRS21271S Gate Drivers

IC GATE DRVR HIGH-SIDE 8SOIC

54,319Infineon Technologies8-SOIC (0.154", 3.90mm Width)RoHS
AUIRS21271S - No Image Available

Same model may have multiple batches, images only for reference.

AUIRS21271S
Part Number (MPN)
AUIRS21271S
Detailed Description
IC GATE DRVR HIGH-SIDE 8SOIC
Package
8-SOIC (0.154", 3.90mm Width)
Key Features
Package / Case: 8-SOIC (0.154", 3.90mm Width); Mounting Type: Surface Mount
Lifecycle Status
Obsolete
RoHS State
RoHS Compliant
Datasheet
PDF AUIRS21271S Datasheet
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Technical Specifications

Infineon Technologies AUIRS21271S Gate Drivers technical specifications.

General

Package / Case
8-SOIC
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 150°C (TJ)
Supply Voltage
9V ~ 20V
Input Type
Non-Inverting
Channel Type
Single
Driven Configuration
High-Side
Number of Drivers
1
Gate Type
IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH
0.8V, 2.5V

Alternate Parts Comparison (AUIRS21271S vs AUIRS21811STR vs IR2151SPBF vs AUIR2085STR)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case8-SOIC8-SOIC8-SOIC8-SOIC
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Supply Voltage9V ~ 20V10V ~ 20V10V ~ 20V10V ~ 15V
Channel TypeSingleIndependentSynchronousSynchronous
Current Peak Output Source Sink290mA, 600mA1.9A, 2.3A125mA, 250mA1A, 1A
Driven ConfigurationHigh-SideHalf-BridgeHalf-BridgeHalf-Bridge
Gate TypeIGBT, N-Channel MOSFETIGBT, N-Channel MOSFETIGBT, N-Channel MOSFETN-Channel MOSFET
High Side Voltage Max Bootstrap600 V600 V600 V100 V
Input TypeNon-InvertingNon-InvertingRC Input CircuitRC Input Circuit
Number of Drivers1222
Rise Fall Time Typ80ns, 40ns60ns, 35ns (Max)80ns, 40ns40ns, 20ns
Action

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