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Infineon Technologies 2EDN8523FXTMA1 Gate Drivers

IC GATE DRVR LOW-SIDE DSO8

47,775 ActiveInfineon Technologies8-SOIC (0.154", 3.90mm Width)RoHS
2EDN8523FXTMA1 - No Image Available

Same model may have multiple batches, images only for reference.

2EDN8523FXTMA1
Part Number (MPN)
2EDN8523FXTMA1
Detailed Description
IC GATE DRVR LOW-SIDE DSO8
Package
8-SOIC (0.154", 3.90mm Width)
Key Features
Package / Case: 8-SOIC (0.154", 3.90mm Width); Mounting Type: Surface Mount
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
PDF 2EDN8523FXTMA1 Datasheet
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Technical Specifications

Infineon Technologies 2EDN8523FXTMA1 Gate Drivers technical specifications.

General

Package / Case
8-SOIC
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 150°C (TJ)
Supply Voltage
4.5V ~ 20V
Input Type
Inverting
Channel Type
Independent
Driven Configuration
Low-Side
Number of Drivers
2
Gate Type
N-Channel MOSFET
Logic Voltage - VIL, VIH
1.2V, 1.9V

Alternate Parts Comparison (2EDN8523FXTMA1 vs IR2151SPBF vs AUIR2085STR vs AUIR2085S)

Side-by-side technical parameter comparison of related primary models in this product family.

This PartAlternate PartsAlternate PartsAlternate Parts
Package / Case8-SOIC8-SOIC8-SOIC8-SOIC
Mounting TypeSurface MountSurface MountSurface MountSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)-40°C ~ 150°C (TJ)
Supply Voltage4.5V ~ 20V10V ~ 20V10V ~ 15V10V ~ 15V
Channel TypeIndependentSynchronousSynchronousSynchronous
Current Peak Output Source Sink5A, 5A125mA, 250mA1A, 1A1A, 1A
Driven ConfigurationLow-SideHalf-BridgeHalf-BridgeHalf-Bridge
Gate TypeN-Channel MOSFETIGBT, N-Channel MOSFETN-Channel MOSFETN-Channel MOSFET
Input TypeInvertingRC Input CircuitRC Input CircuitRC Input Circuit
Number of Drivers2222
Rise Fall Time Typ5.3ns, 4.5ns80ns, 40ns40ns, 20ns40ns, 20ns
High Side Voltage Max Bootstrap--600 V100 V100 V
Action

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