Texas Instruments LM5102SD Gate Drivers
HALF BRIDGE BASED PERIPHERAL DRI

Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
LM5102SD
Detailed Description
HALF BRIDGE BASED PERIPHERAL DRI
Package
10-WDFN Exposed Pad
Lifecycle Status
Active
Datasheet
LM5102SD Datasheet
Quick Jump:
Technical Specifications
Texas Instruments LM5102SD Gate Drivers technical specifications.
General
Package / Case
10-WDFN Exposed Pad
Mounting Type
Surface Mount
Operating Temperature
-40°C ~ 125°C (TJ)
Supply Voltage
9V ~ 14V
Input Type
Non-Inverting
Channel Type
Independent
Driven Configuration
Half-Bridge
Number of Drivers
2
Gate Type
N-Channel MOSFET
Logic Voltage - VIL, VIH
0.8V, 2.2V
Alternate Parts Comparison (LM5102SD vs LM5113QDPRRQ1 vs LM5110-2SDX/NOPB vs LM5106SD/NOPB)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Package / Case | 10-WDFN Exposed Pad | 10-WDFN Exposed Pad | 10-WDFN Exposed Pad | 10-WDFN Exposed Pad |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Operating Temperature | -40°C ~ 125°C (TJ) | -40°C ~ 125°C (TJ) | -40°C ~ 125°C (TJ) | -40°C ~ 125°C (TJ) |
| Supply Voltage | 9V ~ 14V | 4.5V ~ 5.5V | 3.5V ~ 14V | 8V ~ 14V |
| Channel Type | Independent | Independent | Independent | Synchronous |
| Current Peak Output Source Sink | 1.6A, 1.6A | 1.2A, 5A | 3A, 5A | 1.2A, 1.8A |
| Driven Configuration | Half-Bridge | Half-Bridge | Low-Side | Half-Bridge |
| Gate Type | N-Channel MOSFET | N-Channel MOSFET | N-Channel MOSFET | N-Channel MOSFET |
| Input Type | Non-Inverting | Non-Inverting | Inverting | Non-Inverting |
| Number of Drivers | 2 | 2 | 2 | 2 |
| Rise Fall Time Typ | 600ns, 600ns | 7ns, 3.5ns | 14ns, 12ns | 15ns, 10ns |
| High Side Voltage Max Bootstrap | 118 V | 100 V | -- | 118 V |
| Action |
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