Texas Instruments CSD16414Q5 MOSFETs
N-channel NexFET™ MOSFET, single element, 25V drain-source breakdown voltage, 1.9mΩ Rds On max.

Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
CSD16414Q5
Detailed Description
N-channel NexFET™ MOSFET, single element, 25V drain-source breakdown voltage, 1.9mΩ Rds On max. Features 100A continuous drain current, 3.2W power dissipation, and 1.6V nominal gate-source voltage. Operates from -55°C to 150°C, with a 5x6 SON package for surface mounting. Includes 11.1ns fall time and 15ns turn-on delay time.
Package
SON
Key Features
Package: SON
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
CSD16414Q5 Datasheet
Quick Jump:
Technical Specifications
Texas Instruments CSD16414Q5 MOSFETs technical specifications.
General
Series
NexFET™
RoHS
Yes
Packaging
Tape and Reel
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C
Package
SON
Contact Plating
Tin, Matte
Continuous Drain Current ID
100A
Drain to Source Breakdown Voltage
25V
Drain to Source Voltage Vdss
25V
Alternate Parts Comparison (CSD16414Q5 vs CSD18541F5 vs CSD25213W10 vs CSD43301Q5M)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | -- | -- | Surface Mount |
| Operating Temperature | -55°C ~ 150°C | -- | -- | -40°C ~ 125°C (TA) |
| Series | NexFET™ | -- | -- | -- |
| RoHS | Yes | -- | -- | -- |
| Contact Plating | Tin, Matte | -- | -- | -- |
| Continuous Drain Current ID | 100A | -- | -- | -- |
| Drain to Source Breakdown Voltage | 25V | -- | -- | -- |
| Drain to Source Voltage Vdss | 25V | -- | -- | -- |
| Dual Supply Voltage | 25V | -- | -- | -- |
| Element Configuration | Single | -- | -- | -- |
| Fall Time | 11.1ns | -- | -- | -- |
| Gate to Source Voltage Vgs | 16V | -- | -- | -- |
| Action |
Texas Instruments CSD16414Q5 MOSFETs Overview
N-channel NexFET™ MOSFET, single element, 25V drain-source breakdown voltage, 1.9mΩ Rds On max. Features 100A continuous drain current, 3.2W power dissipation, and 1.6V nominal gate-source voltage. Operates from -55°C to 150°C, with a 5x6 SON package for surface mounting. Includes 11.1ns fall time and 15ns turn-on delay time.
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