Texas Instruments CSD16407Q5 MOSFETs
N-channel NexFET™ MOSFET, single element configuration, offering a 25V drain-to-source breakdown voltage and a low 2.4mΩ Rds On at a nominal 1.6V Vgs.
Same model may have multiple batches, images only for reference.
Technical Specifications
Texas Instruments CSD16407Q5 MOSFETs technical specifications.
General
Alternate Parts Comparison (CSD16407Q5 vs CSD18541F5 vs CSD25213W10 vs CSD43301Q5M)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | -- | -- | Surface Mount |
| Operating Temperature | -55°C ~ 150°C | -- | -- | -40°C ~ 125°C (TA) |
| Series | NexFET™ | -- | -- | -- |
| RoHS | Yes | -- | -- | -- |
| Contact Plating | Tin, Matte | -- | -- | -- |
| Continuous Drain Current ID | 100A | -- | -- | -- |
| Drain to Source Breakdown Voltage | 25V | -- | -- | -- |
| Drain to Source Voltage Vdss | 25V | -- | -- | -- |
| Dual Supply Voltage | 25V | -- | -- | -- |
| Element Configuration | Single | -- | -- | -- |
| Fall Time | 9ns | -- | -- | -- |
| Gate to Source Voltage Vgs | 16V | -- | -- | -- |
| Action |
Texas Instruments CSD16407Q5 MOSFETs Overview
N-channel NexFET™ MOSFET, single element configuration, offering a 25V drain-to-source breakdown voltage and a low 2.4mΩ Rds On at a nominal 1.6V Vgs. This surface-mount component features a 100A continuous drain current, 3.1W power dissipation, and a compact SON package measuring 6.1mm x 5.1mm x 1.05mm.
With fast switching characteristics including a 9ns fall time and 11.9ns turn-on delay, it operates across a temperature range of -55°C to 150°C and is RoHS compliant.
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