Texas Instruments CSD16407Q5 MOSFETs
N-channel NexFET™ MOSFET, single element configuration, offering a 25V drain-to-source breakdown voltage and a low 2.4mΩ Rds On at a nominal 1.6V Vgs.
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
CSD16407Q5
Detailed Description
Package
SON
Key Features
Package: SON
Lifecycle Status
Active
RoHS State
Compliant
Datasheet
CSD16407Q5 Datasheet
Quick Jump:
Technical Specifications
Texas Instruments CSD16407Q5 MOSFETs technical specifications.
General
Package
SON
Inventory Source
Winsource
Contact Plating
Tin, Matte
Inventory Source File
/Volumes/T7 Shield/电子元器件数据/抓取的数据/Win-Source数据/winsource_未曾下架数据_202605_1.xlsx
Continuous Drain Current ID
100A
Inventory As of
2026-05-16
Drain to Source Breakdown Voltage
25V
Source Manufacturer
Texas Instruments
Drain to Source Voltage Vdss
25V
Source Category
Discrete Semiconductor Products > TRANSISTORS > Transistors - FETs, MOSFETs - RF
Texas Instruments CSD16407Q5 MOSFETs Overview
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