Texas Instruments CSD16322Q5C MOSFETs
N-channel Power MOSFET, VSON-CLIP EP package, 8-pin surface mount configuration.

Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
CSD16322Q5C
Base Model
Detailed Description
N-channel Power MOSFET, VSON-CLIP EP package, 8-pin surface mount configuration. Features 25V drain-source voltage, 21A continuous drain current, and low 5mOhm drain-source resistance at 8V. NexFET process technology ensures efficient performance with typical gate charge of 6.8nC at 4.5V. Operating temperature range from -55°C to 150°C.
Package
VSON-CLIP EP
Key Features
Package: VSON-CLIP EP
Lifecycle Status
Active
RoHS State
Yes with Exemption
Datasheet
CSD16322Q5C Datasheet
Quick Jump:
Technical Specifications
Texas Instruments CSD16322Q5C MOSFETs technical specifications.
General
RoHS
Yes with Exemption
Number of Pins
8
Mounting Type
Surface Mount
Operating Temperature
-55°C ~ 150°C
Basic Package Type
Non-Lead-Frame SMT
Package Family Name
SON
Package
VSON-CLIP EP
Lead Shape
No Lead
Pcb
8
Package Length Mm
5
Alternate Parts Comparison (CSD16322Q5C vs CSD16322Q5 vs CSD18541F5 vs CSD43301Q5M)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | Alternate Parts | |
|---|---|---|---|---|
| Mounting Type | Surface Mount | -- | -- | Surface Mount |
| Operating Temperature | -55°C ~ 150°C | -- | -- | -40°C ~ 125°C (TA) |
| Number of Pins | 8 | -- | -- | -- |
| RoHS | Yes with Exemption | -- | -- | -- |
| AEC Qualified | No | -- | -- | -- |
| Automotive | No | -- | -- | -- |
| Basic Package Type | Non-Lead-Frame SMT | -- | -- | -- |
| Cage Code | 01295 | -- | -- | -- |
| Category | Power MOSFET | -- | -- | -- |
| Channel Mode | Enhancement | -- | -- | -- |
| Channel Type | N | -- | -- | -- |
| Configuration | Single Quad Drain Triple Source | -- | -- | -- |
| Action |
Texas Instruments CSD16322Q5C MOSFETs Overview
N-channel Power MOSFET, VSON-CLIP EP package, 8-pin surface mount configuration. Features 25V drain-source voltage, 21A continuous drain current, and low 5mOhm drain-source resistance at 8V. NexFET process technology ensures efficient performance with typical gate charge of 6.8nC at 4.5V. Operating temperature range from -55°C to 150°C.
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