Samsung Semiconductor K4T1G084QF-BCF8 DRAM
DDR DRAM, 128MX8, 0.35ns, CMOS, PBGA60
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4T1G084QF-BCF8
Detailed Description
DDR DRAM, 128MX8, 0.35ns, CMOS, PBGA60
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
K4T1G084QF-BCF8 Datasheet
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Technical Specifications
Samsung Semiconductor K4T1G084QF-BCF8 DRAM technical specifications.
General
RoHS
Yes
Number of Pins
60
Terminal Position
BOTTOM
Jedec Package Code
R-PBGA-B60
Supply Voltage Nom Vsup
1.8
Supply Current Max
0.175
Number of Words
134217728
Number of Words Code
128000000
Memory IC Type
DDR DRAM
Access Time Max
0.35
Alternate Parts Comparison (K4T1G084QF-BCF8 vs K4B2G1646Q-BCMA vs K4M561633G-BN75)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | |
|---|---|---|---|
| Number of Pins | 60 | -- | 54 |
| RoHS | Yes | -- | Yes |
| Access Time Max | 0.35 | -- | 5.4 |
| Clock Frequency Max Fclk | 533 | -- | 133 |
| IO Type | COMMON | -- | COMMON |
| Jedec Package Code | R-PBGA-B60 | -- | R-PBGA-B54 |
| Memory IC Type | DDR DRAM | -- | SYNCHRONOUS DRAM |
| Military Spec | False | -- | False |
| Number of Words | 134217728 | -- | 16777216 |
| Number of Words Code | 128000000 | -- | 16000000 |
| Supply Current Max | 0.175 | -- | 0.12 |
| Supply Voltage Nom Vsup | 1.8 | -- | 3 |
| Action |
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