Samsung Semiconductor K4T1G084QE-HCF8 DRAM
DDR DRAM, 128MX8, 0.35ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4T1G084QE-HCF8
Detailed Description
DDR DRAM, 128MX8, 0.35ns, CMOS, PBGA60, HALOGEN FREE AND ROHS COMPLIANT, FBGA-60
Lifecycle Status
Active
RoHS State
RoHS Compliant
Datasheet
K4T1G084QE-HCF8 Datasheet
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Technical Specifications
Samsung Semiconductor K4T1G084QE-HCF8 DRAM technical specifications.
General
RoHS
Yes
Number of Pins
60
Operating Temperature
0 ~ 85
Terminal Position
BOTTOM
Jedec Package Code
R-PBGA-B60
Width
7.5
Length
9.5
Number of Functions
1
Temperature Grade
OTHER
Supply Voltage Nom Vsup
1.8
Alternate Parts Comparison (K4T1G084QE-HCF8 vs K4B2G1646Q-BCMA vs K4M561633G-BN75)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | |
|---|---|---|---|
| Operating Temperature | 0 ~ 85 | -- | -25 ~ 85 |
| Number of Pins | 60 | -- | 54 |
| RoHS | Yes | -- | Yes |
| Access Time Max | 0.35 | -- | 5.4 |
| Clock Frequency Max Fclk | 533 | -- | 133 |
| IO Type | COMMON | -- | COMMON |
| Jedec Package Code | R-PBGA-B60 | -- | R-PBGA-B54 |
| Lead Free | Yes | -- | Yes |
| Length | 9.5 | -- | 11 |
| Memory IC Type | DDR DRAM | -- | SYNCHRONOUS DRAM |
| Military Spec | False | -- | False |
| Number of Functions | 1 | -- | 1 |
| Action |
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