Samsung Semiconductor K4S561633C-RN75 DRAM
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, CSP-54
Same model may have multiple batches, images only for reference.
Manufacturer
Part Number (MPN)
K4S561633C-RN75
Detailed Description
Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54, CSP-54
Lifecycle Status
Active
RoHS State
No
Datasheet
K4S561633C-RN75 Datasheet
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Technical Specifications
Samsung Semiconductor K4S561633C-RN75 DRAM technical specifications.
General
RoHS
No
Number of Pins
54
Operating Temperature
-25 ~ 85
Terminal Position
BOTTOM
Jedec Package Code
R-PBGA-B54
Width
8.1
Length
15.1
Number of Functions
1
Temperature Grade
OTHER
Supply Voltage Nom Vsup
3
Alternate Parts Comparison (K4S561633C-RN75 vs K4B2G1646Q-BCMA vs K4M561633G-BN75)
Side-by-side technical parameter comparison of related primary models in this product family.
| This Part | Alternate Parts | Alternate Parts | |
|---|---|---|---|
| Operating Temperature | -25 ~ 85 | -- | -25 ~ 85 |
| Number of Pins | 54 | -- | 54 |
| RoHS | No | -- | Yes |
| Access Time Max | 5.4 | -- | 5.4 |
| Clock Frequency Max Fclk | 133 | -- | 133 |
| IO Type | COMMON | -- | COMMON |
| Jedec Package Code | R-PBGA-B54 | -- | R-PBGA-B54 |
| Length | 15.1 | -- | 11 |
| Memory IC Type | SYNCHRONOUS DRAM | -- | SYNCHRONOUS DRAM |
| Military Spec | False | -- | False |
| Number of Functions | 1 | -- | 1 |
| Number of Ports | 1 | -- | 1 |
| Action |
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